High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess

Wu, C.S.; Ren, F.; Pearton, S. J.; Hu, Ming; Pao, C.K.; Wang, R.F.

doi:10.1109/16.398657

Cited by 22 publications

(1 citation statement)

References 13 publications

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“…Recently, pHEMTs have shown superior performance at microwave and millimetre frequency range. pHEMTs have also demonstrated excellent performance, both as microwave and digital devices [4][5][6]. AlGaN/GaN HEMTs have emerged as a strong option for high power application owing to their large band gap energy and high saturation velocity [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

Kumar¹,

Arya²,

Ahlawat³

2013

VLSICS

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An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson's equation.The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have been evaluated to determine the output characteristics, device transconductance and cut-off frequency for 50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been obtained. The results so obtained are in close agreement with experimental data, thereby proving the validity of the model.

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Section: Introductionmentioning

confidence: 99%

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

Kumar¹,

Arya²,

Ahlawat³

2013

VLSICS

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Microwave analysis of a 70 nm InGaAs pHEMT on InP substrate for nanoscale digital IC application

Ahlawat¹,

Pandey²,

Pandey³

2007

Micro & Optical Tech Letters

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A new charge‐control model for the microwave characteristics of an AlGaAs/InGaAs/InP HEMT of 70 nm gate length has been developed. The threshold voltage has been modified by the inclusion of mole fraction and thermal effects. The current voltage characteristics have been obtained and compared with the 70 nm gate length device. In order to avoid short‐channel effects, an aspect ratio (gate length to gate to channel distance) larger than 5 is maintained in the analysis. The small‐signal microwave parameters (gm, gd) have also been evaluated. 2‐D analysis has been carried out in the saturation region. The unity gain cut‐off frequency of the order of 220 GHz is obtained at a gate length of 70 nm. Device parameters so obtained were used to calculate the hemt Y‐parameters. The Y‐parameters hold from the threshold region to the edge of saturation. The unilateral gain so obtained from the Y‐parameters yield a closer fit to the numerical model. All the results have been compared with the experimental data and show a close agreement and the validity of our model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2462–2470, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22779

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Plasma Processing of III-V Materials

Youtsey¹,

Adesida

2000

Handbook of Advanced Plasma Processing Techniques

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High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess

Cited by 22 publications

References 13 publications

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

Microwave analysis of a 70 nm InGaAs pHEMT on InP substrate for nanoscale digital IC application

Plasma Processing of III-V Materials

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