The reliability of GaAs MIMCAPs is studied. The MIMCAPs have a low temperature PECVD nitride, Au metal electrodes and Ti adhesion layers. By examining the conduction properties of the SiN dielectric in these capacitors, a model is proposed to predict breakdown. A ramped voltage method is used to determine the extrinsic defect densities. The method for calculating failure rates from this model is shown, and voltage and temperature accelerated testing factors are derived.
PECVD nitride passivated high-power PHEMT's were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.
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