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The reliability of GaAs MIMCAPs is studied. The MIMCAPs have a low temperature PECVD nitride, Au metal electrodes and Ti adhesion layers. By examining the conduction properties of the SiN dielectric in these capacitors, a model is proposed to predict breakdown. A ramped voltage method is used to determine the extrinsic defect densities. The method for calculating failure rates from this model is shown, and voltage and temperature accelerated testing factors are derived.
Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions tor reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.
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