High Current Density Electrical Breakdown of TiS₃ Nanoribbon‐Based Field‐Effect Transistors

Abstract

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS 3 ) are studied here. The high breakdown current densities of up to 1.7 × 10 6 A cm −2 are observed in TiS 3 nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, a thermogravimetric analysis of bulk TiS 3 is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS 3 and subsequent desorption of sulfur atoms play an important role in the electrical breakdown of the material in ambient conditions. The results show that TiS 3 is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n Junction

“…Figure a,b shows optical images of synthesized TiS 3 microcrystals with a characteristic ribbon‐like shape . Figure c shows a representation of the crystal structure of TiS 3 , a monoclinic ZrSe 3 ‐type lattice with two lattice vectors per unit cell.…”

“…TiS 3 Preparation : The TiS 3 microcrystals were synthesized by sulfuration of titanium powder which was vacuum sealed in an ampule with sulfur powder (>75% atomic sulfur) and heated to 500 °C. After 20 h of growth, the ampule was cooled down to ambient conditions …”

Pressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3

“…The weak connecting nature of the lattice makes TiS 3 flexible in fabricating nanosheets-like transistors with tailored morphology and electrical properties [3] or nanoribbon-based transistors with a record high breakdown current density of 1.7×10 6 A cm −2 [4]. In the case of monolayer, TiS 3 is predicted to exhibit good light absorption in the visible-light region [5], indicating its great potential in optical devices.…”

Energy Dissipation in Black Phosphorus Heterostructured Devices

“…The vertical devices are more thermally stable and can sustain more than 230 times higher electrical field and eight times higher electrical power than lateral devices due to favorable thermal properties of graphene and hBN that provide efficient and homogeneous thermal spreading paths. We compare the breakdown field and power values in our measured device with those of other reported typical nanoelectronic materials such as TiS 3 , SnO 2 , MoS 2 , Graphene, and BP in Figure c and previously reported studies which are related to BP devices at high field in Table 1 . The comparison indicated that our proposed BP based heterostructure sustained the highest value among the previously reported.…”