Pressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

An, Chao; Lu, Pengchao; Chen, Xuliang; Zhou, Yonghui; Wu, Juefei; Zhou, Ying; Park, Changyong; Gu, Chaohao; Zhang, Bowen; Yuan, Yifang; Sun, Junqiang; Yang, Zhaorong

doi:10.1103/physrevb.96.134110

Cited by 14 publications

(19 citation statements)

References 35 publications

(31 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As an example, we plot in the inset in Figure two successive pressure dependencies of the electrical resistance of sample #2. This feature is consistent with observations of recent high-pressure electrical resistance measurements for TiS 3 that documented its pressure-driven shift to more insulating state . On the other hand, this weak rising in the electrical resistance with pressure might be linked to a minor deterioration in the sample quality under high pressure, which could negatively affect the carrier mobility values because of the formation of many additional defects.…”

Section: Resultssupporting

confidence: 91%

“…This feature is consistent with observations of recent high-pressure electrical resistance measurements for TiS 3 that documented its pressure-driven shift to more insulating state. 66 On the other hand, this weak rising in the electrical resistance with pressure might be linked to a minor deterioration in the sample quality under high pressure, which could negatively affect the carrier mobility values because of the formation of many additional defects. A resembling but much more pronounced behavior was observed, for example, for fragile organic conductors.…”

Section: Resultsmentioning

confidence: 99%

“…48 X-ray diffraction studies detected a phase transition near 22 GPa and described that as "isosymmetric" linked to rearrangement of the S−S chemical bonds along the a-axis (Figure 1a). 66 For rough estimation of a pressure dependence of the band gap in ZrSe 3 , we can use the same approach as the above for TiS 3 . For the first and second pressurization runs for the pressure range of 2−5 GPa, we determined the dS/dP coefficients to be of ≈−187 and −144 (μV/K)/GPa, respectively (Figure 7b).…”

Section: Discussionmentioning

confidence: 99%

“…58,59 High-pressure structural investigations on TiS 3 demonstrated that its original ZrSe 3 -type lattice persists under compression up to 22 GPa, and beyond this point, it suffers to an isosymmetric transition. 66 These findings suggest that in the moderate pressure range, which can be realized in various industrial appliances, the crystal structure of these materials is conserved, whereas stress-controlled tuning of their optoelectronic and other properties could be essential and promising for technological use.…”

Section: Introductionmentioning

confidence: 99%

“…In application to these 2D materials, potential pressure-driven tuning of their optoelectronic and other characteristics can open novel portals of their industrial use. For example, earlier theoretical calculations for different forms of TiS 3 , such as monolayers, bilayers, a few-layer-thin films, nanoribbons, and so forth, predicted that uniaxial stresses of different orientations can noticeably alter the band gap values as well as can switch between the indirect and direct types of the band gap. ,,,,, Previous investigations on 2D transition-metal dichalcogenides, such as TX 2 (T = Mo and W and X = S, Se, and Te) having fundamental band gap values of about 1.1–1.4 eV, showed that they turn to metals when subjected to high-pressure application above 40–60 GPa in WSe 2 , − 36–37 GPa in WS 2 , , 30–40 GPa in MoSe 2 , , 19 GPa in MoTe 2 , and above 20–40 GPa in MoS 2 . − These semiconductor–metal transitions either were accompanied by isostructural transformations − ,,, or happened without structural changes. , High-pressure structural investigations on TiS 3 demonstrated that its original ZrSe 3 -type lattice persists under compression up to 22 GPa, and beyond this point, it suffers to an isosymmetric transition . These findings suggest that in the moderate pressure range, which can be realized in various industrial appliances, the crystal structure of these materials is conserved, whereas stress-controlled tuning of their optoelectronic and other properties could be essential and promising for technological use.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

et al. 2018

View full text Add to dashboard Cite

We experimentally investigate the thermoelectric power (Seebeck effect) of quasi-two-dimensional single crystals of titanium and zirconium trichalcogenides (TiS 3 , ZrS 3 , ZrSe 3 , and ZrTe 3 ) under applied high pressure up to 10 GPa. Both sulfides were characterized by n-type semiconducting conduction in the whole pressure range investigated and, generally, showed moderate pressure responses of their electronic properties. Metallic ZrTe 3 conserved its p-type conduction under pressure, and its Seebeck coefficient curve displayed a distinct crossover near 2 GPa. Semiconducting ZrSe 3 demonstrated more remarkable responses to applied pressure, which included a multiorder gradual drop in its electrical resistance value up to 9 GPa and an n−p inversion of the dominant conduction type around 6 GPa. Furthermore, we found that a thermoelectric power factor of ZrSe 3 may be greatly improved under high applied pressure, achieving a value of an order of 3.5 mW/(K 2 m) at 9.5 GPa. Thus, an appropriately strained p-type ZrSe 3 with a dramatically reduced band gap value turns to be a promising thermoelectrics. One can anticipate that ZrSe 3 −ZrTe 3 solid solutions, in which the addition of ZrTe 3 should decrease the band gap value of ZrSe 3 in a controlled manner, could also demonstrate high thermoelectric performance parameters. Reversibility and reproducibility of the pressure-driven changes in the electronic properties of ZrSe 3 suggest that it has a potential for other industrial applications linked to cyclic stress loads, for example, in n−p switches or control of p−n−p transistor elements.

show abstract

Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

et al. 2018

View full text Add to dashboard Cite

show abstract

Recent Advances in the Functional 2D Photonic and Optoelectronic Devices

Wang

Cui

et al. 2018

Advanced Optical Materials

231

128

View full text Add to dashboard Cite

Abstract2D layered materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDCs), and their hybrid systems exhibit wide coverage of bandgaps, unique crystal structures, and the facile integration for potential applications in photonic and optoelectronic devices. In the recent two years, various 2D functional systems have been developed with novel optoelectronic properties, thereby expanding the functional applications. Beyond the speed, efficiency, or sensitivity, these 2D crystals can offer additional advantages and distinct applications in terms of spectrum range, polarization, intensity, and structural designs. The main contents here focus on optoelectronic and photonic devices with unique functional applications, especially mentioning areas as follows: long‐wavelength photodetector, 2D polarization‐sensitive photodetector, 2D optoelectronic memory, and 2D material‐based optical modulator. For each section, the device design, performance, and operational principles are investigated and systematically discussed. Finally, the current research status is summarized and perspectives on possible applications in future are offered.

show abstract

Highly Polarized Photoelectrical Response in vdW ZrS₃ Nanoribbons

Wang

Blei

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

and 2D isotropic systems, and are anticipated to have an impact in applications for electronic and optoelectronic devices systems. Examples of such quasi-1D materials include, but are not limited to, black phosphorus [6][7][8][9][10][11][12] (BPs), ReS 2 , [13][14][15][16] and ReSe 2 , [17,18] and group IV-VI compounds such as GaTe [19,20] and SnSe. [21,22] Despite the pioneering investigations on the above materials, group-IV transition metal trichalcogenides (TMTCs) with a chemical formula of MX 3 (M = Ti, Zr, or Hf, and X = S, Se, or Te) have recently emerged as new candidates for the next generation of electronics and optoelectronics owing to theoretically predicted high carrier mobility values. [13,[23][24][25] Such TMTCs consist of distorted MX 6 polyhedrons extending along the in-plane b-axis direction, [26] forming quasi-1D chains where the MX bond between adjacent chains (along a-axis) is estimated to be 80% less than that of within the chains (along b-axis), [27] thus they exhibit strong structural anisotropy that is directly evidenced by the whisker-like crystals and the elongated shape of exfoliated nanoflakes falling between nanowires and nanosheets. Our previous work focused on zirconium trisulfide (ZrS 3 ) has shown the angle-dependent vibrational nature [28] and the strong dichroic emission from nanoribbons. [13] However except for the PL spectral characterization, more efforts are needed in surveying its in-plane anisotropy in the polarization related devices, thus enabling efficient 2D anisotropic materials, such as black phosphorus, ReS 2 , and GaTe, have been shown to exhibit exciting direction-and polarization-sensitive material properties. Highly crystalline chemical-vapor-transport-grown ZrS 3 crystals exhibit large optical-absorption-coefficient anisotropy, which doubles under resonance conditions. The observed optical anisotropy manifests itself in angle-resolved photocurrent density polar plots with dichroic ratio (I pb /I pa ) of 1.73 excited by a laser source of λ = 450 nm and 1.14 by λ = 532 nm. The optical absorption and electronic dichroic response are fully explained through detailed band structure and polarization-sensitive optical-absorption-spectrum calculations. Not only is the family of 2D anisotropic semiconductors expanded into Zr-based trichalcogenides but fundamental insights on how crystalline anisotropy, optical absorption dichroism, and generated photocurrents are interrelated in van der Waals Zr-based trichalcogenides materials are also provided.

show abstract

Pressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3

Cited by 14 publications

References 35 publications

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

Recent Advances in the Functional 2D Photonic and Optoelectronic Devices

Highly Polarized Photoelectrical Response in vdW ZrS₃ Nanoribbons

Contact Info

Product

Resources

About

Pressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3

Cited by 14 publications

References 35 publications

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

Thermoelectric Properties of Compressed Titanium and Zirconium Trichalcogenides

Recent Advances in the Functional 2D Photonic and Optoelectronic Devices

Highly Polarized Photoelectrical Response in vdW ZrS3 Nanoribbons

Contact Info

Product

Resources

About

Highly Polarized Photoelectrical Response in vdW ZrS₃ Nanoribbons