High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H₂ Plasma Treatment

Jeong, Hyunsuk; Kim, Y.S.; Baik, Seunghun; Kang, Hongki; Jang, Jae Eun; Kwon, Hyuk‐Jun

doi:10.1109/led.2022.3182730

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…Compared with Si, Ge has larger electron and hole mobility, a narrower band-gap (0.67 eV) as well as high phonon responsivity in the near-infrared region [8][9][10], which is beneficial to fabricate Ge-based photodetectors and Ge-based thin film transistor (TFT) with good device performance [11][12][13][14]. In order to further enhance the performance of devices based on Si and Ge NCs, active doping is usually required to obtain all kinds of desired properties of the Si and Ge NC materials [15][16][17][18]. However, doping of nanocrystals is very difficult and so-called "Self-purification" is often claimed to make this behavior even more difficult, as the distance a defect or impurity must move to reach the surface of a nanocrystal is very small [19,20].…”

Section: Introductionmentioning

confidence: 99%

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

Shan

Wang

Sun

et al. 2023

Preprint

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Boron (B)-doped germanium nanocrystals (Ge NCs) films with various doping concentrations were prepared via the plasma-enhanced chemical vapor deposition (PECVD) technique followed by a thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities ${\mu }_{Hall}$ of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2∙V− 1, which could be ascribed to the reduction of surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities ${\mu }_{H}\left(T\right)$ exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A detailed investigation was carried out for the different carrier transport properties in B-doped Ge NCs films and further discussion with emphasis on the scattering mechanisms in the transport process were proposed.

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Section: Introductionmentioning

confidence: 99%

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

Shan

Wang

Sun

et al. 2023

Preprint

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Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation

Baik

Jeong

Park

et al. 2023

Applied Surface Science

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The electronic properties of boron-doped germanium nanocrystals films

Shan,

Wang,

Sun

et al. 2023

Discover Nano

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Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities $${\mu }_{\mathrm{Hall}}$$ μ Hall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities $${\mu }_{\mathrm{H}}(T)$$ μ H ( T ) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A comprehensive investigation was conducted to examine the distinct carrier transport properties in B-doped Ge NC films, and a detailed discussion was presented, focusing on the scattering mechanisms involved in the transport process.

show abstract

High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H₂ Plasma Treatment

Cited by 3 publications

References 36 publications

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation

The electronic properties of boron-doped germanium nanocrystals films

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