The electronic properties of boron-doped germanium nanocrystals films

Abstract

Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities $${\mu }_{\mathrm{Hall}}$$ μ Hall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities $${\mu }_{\mathrm{H}}(T)$$ μ H ( T ) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A comprehensive investigation was conducted to examine the distinct carrier transport properties in B-doped Ge NC films, and a detailed discussion was presented, focusing on the scattering mechanisms involved in the transport process.

Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates

“…Recently, furnace annealing [5] and metal-induced crystallization [6] have demonstrated the ability to produce high-quality polycrystalline germanium films with good electron and hole mobility suitable for device fabrication. However, in these methods, the crystallization of amorphous germanium films requires relatively high temperatures of around 200 degrees Celsius and higher [6].…”