Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation

Baik, Seunghun; Jeong, Hee-Won; Park, Geuntae; Kang, Hongki; Jang, Jae Eun; Kwon, Hyuk‐Jun

doi:10.1016/j.apsusc.2023.157967

Cited by 2 publications

(1 citation statement)

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“…On the other hand, the nanosecond pulse laser annealing method generates pulses of 30–40 ns, which raise the surface temperature quickly and then allow it to cool rapidly, enabling localized annealing (Figure S1a , Supporting Information). [ 24 , 25 , 26 ] Additionally, such laser annealing systems use a single wavelength, allowing more precise optimization of the thermal budget based on material absorption properties. [ 27 ] As a result, laser annealing can effectively manage the thermal budget, ensuring optimal temperature control in complex 3D and flexible devices incorporating multi‐material layers.…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration

Kim,

Jeong,

Pyo

et al. 2024

Advanced Science

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Ferroelectric field‐effect transistors (FeFETs) are increasingly important for in‐memory computing and monolithic 3D (M3D) integration in system‐on‐chip (SoC) applications. However, the high‐temperature processing required by most ferroelectric memories can lead to thermal damage to the underlying device layers, which poses significant physical limitations for 3D integration processes. To solve this problem, the study proposes using a nanosecond pulsed laser for selective annealing of hafnia‐based FeFETs, enabling precise control of heat penetration depth within thin films. Sufficient thermal energy is delivered to the IGZO oxide channel and HZO ferroelectric gate oxide without causing thermal damage to the bottom layer, which has a low transition temperature (<250 °C). Using optimized laser conditions, a fast response time (<1 µs) and excellent stability (cycle > 106, retention > 106 s) are achieved in the ferroelectric HZO film. The resulting FeFET exhibited a wide memory window (>1.7 V) with a high on/off ratio (>105). In addition, moderate ferroelectric properties (2·Pr of 14.7 µC cm−2) and pattern recognition rate‐based linearity (potentiation: 1.13, depression: 1.6) are obtained. These results demonstrate compatibility in HZO FeFETs by specific laser annealing control and thin‐film layer design for various structures (3D integrated, flexible) with neuromorphic applications.

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Section: Resultsmentioning

confidence: 99%