The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

Abstract

Boron (B)-doped germanium nanocrystals (Ge NCs) films with various doping concentrations were prepared via the plasma-enhanced chemical vapor deposition (PECVD) technique followed by a thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities \({\mu }_{Hall}\) of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2∙V− 1, which could be ascribed to the reduction of surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities \({\mu }_{H}\left(T\right)\) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A detailed investigation was carried out for the different carrier transport properties in B-doped Ge NCs films and further discussion with emphasis on the scattering mechanisms in the transport process were proposed.

Ultrafast infrared laser crystallization of amorphous Ge films on glass substrates

“…Recently, furnace annealing [5] and metal-induced crystallization [6] have demonstrated the ability to produce high-quality polycrystalline germanium films with good electron and hole mobility suitable for device fabrication. However, in these methods, the crystallization of amorphous germanium films requires relatively high temperatures of around 200 degrees Celsius and higher [6].…”