Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

Abstract

We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that ‘‘real-time’’ projection lithography (selective area deposition) of boron-carbide devices is possible.

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

“…In contrast, a double diffraction peak at 43.7° and 44.2° is observed in Fig. 3b for undoped B 5 C [1,8,27]. The calculated d spacing for the doublet diffraction peak is 2.03 Å and 1.87 Å, respectively, which is 5%-10% smaller than for the P-doped alloy.…”

Surface photovoltage effects on the isomeric semiconductors of boron-carbide

“…Such heterogeneous decomposition, while leading to closure of the HOMO-LUMO gap, would also be accompanied by very large photoemission peak widths that are not observed, as noted earlier. Thus the prior explanations 15,19 of the photoemission binding energy shifts, for orthocarborane, as due to HOMO-LUMO gap closure are incorrect.…”

“…A wealth of characterization suggests that the resulting boron-carbide semiconductor materials, from both electron beam and synchrotron radiation assisted decomposition, are very similar. 15,16 During decomposition, the exopolyhedral hydrogen is removed from the carborane molecules.…”

Fabrication of boron-carbide/boron heterojunction devices

“…This achievement builds upon the recent success in construction of boron-carbide/nSi͑111͒ heterojunction diodes. 5,6 We have demonstrated that boron-carbide/Si͑111͒ heterojunction diodes can be fabricated from closo-1,2,-dicarbadodecaborane (C 2 B 10 H 12 ; orthocarbonane͒ by using synchrotron radiation-induced chemical vapor deposition ͑SR-CVD͒ 5,6 and plasmaenhanced chemical vapor deposition ͑PECVD͒. 2,3,5-7 Pure boron films also had been deposited on silicon from nidodecaborane (B 10 H 14 ; decaborane͒ by using SR-CVD.…”