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We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that ‘‘real-time’’ projection lithography (selective area deposition) of boron-carbide devices is possible.

The hybrid composite electrode comprising CuO and Cu 2 O micronanoparticles in a highly graphitized porous C matrix (CuO/Cu 2 O-GPC) has a rational design and is a favorable approach to increasing the rate capability and reversible capacity of metal oxide negative materials for Li-and Na-ion batteries. CuO/Cu 2 O-GPC is synthesized through a Cu-based metal−organic framework via a one-step thermal transformation process. The electrochemical performances of the CuO/Cu 2 O-GPC negative electrode in Li-and Na-ion batteries are systematically studied and exhibit excellent capacities of 887.3 mAh g −1 at 60 mA g −1 after 200 cycles in a Li-ion battery and 302.9 mAh g −1 at 50 mA g −1 after 200 cycles in a Na-ion battery. The high electrochemical stability was obtained via the rational strategy, mainly owing to the synergy effect of the CuO and Cu 2 O micronanoparticles and highly graphitized porous C formed by catalytic graphitization of Cu nanoparticles. Owing to the simple one-step thermal transformation process and resulting high electrochemical performance, CuO/Cu 2 O-GPC is one of the prospective negative active materials for rechargeable Li-and Na-ion batteries.

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The surface of a spinel LiNi0.5Mn1.5O4 cathode was modified with a nano-LiNbO3 coating layer by employing a Nb citrate-coated Ni0.25Mn0.75(OH)2 precursor and subsequent single calcination with LiOH at 900 °C.

A novel, efficient, cost-effective, and high-level security performance anticounterfeit device achieved by plasmonic-enhanced upconversion luminescence (UCL) is demonstrated. The plasmonic architecture consists of the randomly dispersed Ag nanowires (AgNWs) network, upconversion nanoparticles (UCNPs) monolayer, and metal film, in which the UCL is enhanced by a few tens, compared to reference sample, becuase the plasmonic modes lead to the concentration of the incident near infrared (NIR) light in the UCNPs monolayer. In the configuration, both the localized surface plasmons (LSPs) around the metallic nanostructures and gap plasmon polaritons (GPPs) confined in the UCNPs monolayer, significantly contribute to the UCL enhancement. The UCL enhancement mechanism resulting from enhanced NIR absorption, boosted internal quantum process, and formation of strong plasmonic hot spots in the plasmonic architecture is analyzed theoretically and numerically. More interestingly, a proof-of-concept anticounterfeit device using the plasmonic-enhanced UCL is proposed, through which a nonreusable and high-level cost-effective security device protecting the genuine products is realized.S P n .[34] The latter is due to the typical linear decay of the excited population, whereas the nonlinear process is led by the two-photon process-intervened energy transfer. [28,[35][36][37] The pNUM configuration is observed to exhibit the threshold for the linear process at a lower excitation power than that for other architectures, indicating that the second excited level in Adv. Funct. Mater. 2016, 26, 7836-7846 www.afm-journal.de www.MaterialsViews.com full paper 7838 wileyonlinelibrary.com

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We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.