Fabrication of boron-carbide/boron heterojunction devices

Abstract

We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

The coadsorption and interaction of molecular icosahedra with mercury

“…The decomposition of ortho carborane does lead to the formation of a semiconducting boron carbide and is easily doped with nickel [17,[22][23][24]51]. Given the small interaction between Hg and the molecular fi lm, at issue is whether Hg dopes the semiconducting boron carbide resulting from the dehy drogenation of orthocarborane.…”

Annealing effects on the optical properties of semiconducting boron carbide

“…1 A semiconducting form of boron carbide was proposed in 1959, 2 but only much more recently was the fabrication of boron carbide devices achieved, first using plasmaenhanced chemical vapor deposition ͑PECVD͒ of closo-1,2,-dicarbodecaborane ͑ortho-carborane, C 2 B 10 H 12 ͒. [3][4][5] Highly resistive boron carbide thin films have now been fabricated using a variety of CVD and physical vapor deposition techniques, including plasma decomposition of diborane and methane, 6,7 synchrotron radiation induced chemical vapor deposition, 8,9 and sputtering of boron carbide targets. 10,11 As a stable, nontoxic source of B and C, ortho-carborane has been successfully used to grow both p-type ͑self-doped͒ semiconducting boron carbide films on Si ͑Refs.…”

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

“…essentially intrinsic [1,3,4]. In order to develop true boron-carbon homojunction devices, it is necessary to develop n-type materials by means of doping.…”

“…Diodes and simple junction field effect transistors have been constructed from boron-carbon alloy thin films [1,3,4,7]. Typically, these devices have been constructed from boron-carbon thin films grown on either Si or a boron thin film.…”