Heat-sensitive materials for uncooled microbolometer arrays

La0.7Sr0.3MnO3 thin films on Bi4Ti3O12/CeO2/yttria-stabilised-zirconia buffered Si(001) substrates: Electrical, magnetic and 1/f noise properties

“…Around 300 K, LSMO presents typical TCR values of about 0.02, which is of the order or even higher than those of actual materials used for the fabrication of uncooled resistive bolometers, such as amorphous semiconductors, polycrystalline SiGe, semiconducting YBa 2 Cu 3 O 7 (YBCO), VO 2 and VO x [3,4]. In addition to large TCR, and low G, one also has to consider the intrinsic noise in the thin films since it obviously sets the limit to the device performances.…”

“…LSMO thin films have shown optimal properties when grown epitaxially on well lattice matched single crystal substrates, such as SrTiO 3 (STO), LaAlO 3 or NdGaO 3 LSMO (and many of the multicomponent oxides of interest) with silicon require big efforts, since three major problems occur:…”

Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

“…The appearance of high-sensitivity uncooled IR arrays has been hailed by specialists as the most significant achievement of IR engineering in the last quarter-century [1]. Among the thermochromic materials vanadium oxide has been subjected for intensive application for uncooled bolometric detectors due to its excellent resistance properties, suitable thermal times constant s, low 1/f noise, and high temperature coefficient of resistance (TCR) [2].…”

Optical and Electrical Characterizations of Uncooled Bolometers Based on LSMO Thin Films

“…The 50 nm thick LSMO layer has been epitaxially deposited by reactive molecular beam epitaxy [9,10] onto CaTiO3 buffered silicon substrates. The suspended lines were fabricated by using the isotropic nature of the reactive ion etching of the silicon in SF6 gas as described in [8]. A reference suspended bridge have been also fabricated (width = 4 µm, length = 100 µm, thickness = 10 nm).…”

“…It has a large temperature coefficient of resistance, named TCR = 1/R × dR/dT, of about 0.02 K −1 in the 300-340 K range and it also shows a low noise level compared with other resistive materials such as semiconductors and other oxide materials [6][7][8].…”