Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

Dai, Jun; Wang, Xingzhi; He, Shi; Huang, Ying; Yi, Xinjian

doi:10.1016/j.infrared.2007.12.002

Cited by 52 publications

(33 citation statements)

References 15 publications

(12 reference statements)

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“…These oxide layers were deposited by reactive dc sputtering followed by an annealing treatment (673K). The analysis showed a TCR value of ∼−4.4% •K −1 and a sheet resistance of 20 k Ω/square (Dai, X. Wang, He, Huang, & Yi, 2008;Lv et al, 2007). Although these results indicate a breakthrough for material performance, this material is not suitable for micro-machining process on Si and the fabrication of bolometers due to high temperature budget.…”

Section: Vanadium Oxidementioning

confidence: 96%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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Section: Vanadium Oxidementioning

confidence: 96%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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“…O TCR e a resistência de folha de todas as amostras foram medidos em um sistema de quatro pontas construído especialmente para esta finalidade. O TCR foi obtido pela equação de Arrhenius [2,9].…”

Section: Fabricação E Caracterização Dos Filmes De Voxunclassified

“…Tais realizações se devem às pesquisas básicas de desenvolvimento de materiais sensíveis ao infravermelho, ao aprimoramento das técnicas de fabricação e ao surgimento de novos métodos ou processos de obtenção desses materiais. Dentre os materiais sensíveis atualmente empregados na fabricação de detectores de infravermelho não refrigerados, os óxidos de vanádio (VO X ) são os mais utilizados devido ao elevado coeficiente de variação da resistência com a temperatura (TCR), propriedade que justifica a sua aplicação comercial [1][2][3].…”

Section: Introductionunclassified

Análise comparativa das propriedades elétricas de camadas e multicamadas de VOx depositadas por pulverização catódica para aplicação em bolômetros

Medeiro

Castro²,

Cruz

et al. 2019

Matéria (Rio J.)

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RESUMOFilmes finos de VO X (camada e multicamadas) foram fabricados por pulverização catódica com rádiofrequência assistida por campo magnético constante para aplicação em detectores de radiação infravermelha do tipo bolômetro. As amostras foram fabricadas sem quebra de vácuo a partir de três alvos: V 2 O 3; VO 2 e V 2 O 5 . Um sistema de pulverização catódica com três catodos foi construído para a realização deste trabalho. Os resultados mostraram que ambas as configurações, camadas e multicamadas, apresentaram TCR semelhantes, da ordem de 2 %/K, e resistência de folha inferior a 20 kΩ/quad, sendo ambas recomendadas para emprego em bolômetros. Palavras-chave: VO X , pulverização catódica, bolômetros.ABSTRACT VO X thin films (single and multilayers) were fabricated by RF magnetron sputtering for application in bolometers. The samples were deposited without vacuum break from three targets: V 2 O 3 ; VO 2 and V 2 O 5 . A RF magnetron sputtering system with three cathodes was built to carry out the depositions. The results showed that both configurations, single layers and multilayers, presented similar values of TCR, roughly 2%/K, and sheet resistance less than 20 kΩ/sq, being recommended for application in bolometers.

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“…Considering that VO 2 films are put to practical uses, it is desirable that the processing temperature is 300°C or less in order to be compatible with device fabrication technologies. 11) Additionally, for a simpler and lower-cost process, it is necessary that VO 2 films are prepared in air without controlled ambient atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Preparation of polycrystalline VO2 films on glass and TiO2/glass substrates by means of excimer laser assisted metal organic deposition

Nishikawa

Nakajima

Manabe

et al. 2010

J. Ceram. Soc. Japan

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An excimer laser assisted metal organic deposition process for the preparation of vanadium dioxide (VO 2 ) films is described. When a precursor film grown on a silica glass substrate by preheating at 300°C was irradiated with a KrF laser at room temperature in air, the film was crystallized into polycrystalline VO 2 phases. Generally, the preparation of VO 2 films requires strict atmosphere control, but in this process, the polycrystalline VO 2 films were successfully prepared without it. Moreover, it was revealed that crystallization into the VO 2 phases was promoted by a TiO 2 buffer layer placed on the glass substrate. This means that the photochemical reaction induced by the TiO 2 absorbing the laser participates in the crystallization. The electrical resistivity of the film grown on the TiO 2 /glass substrate was lowered compared to that of the film grown on the glass substrate due to improvement of the film uniformity. The crystallinity of the obtained film was dependent on the irradiation time. With the improved crystallinity of the film, the resistivity drop through the metal-insulator transition became large.

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Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

Cited by 52 publications

References 15 publications

Group IV Materials for Low Cost and High Performance Bolometers

Group IV Materials for Low Cost and High Performance Bolometers

Análise comparativa das propriedades elétricas de camadas e multicamadas de VOx depositadas por pulverização catódica para aplicação em bolômetros

Preparation of polycrystalline VO2 films on glass and TiO2/glass substrates by means of excimer laser assisted metal organic deposition

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