La0.7Sr0.3MnO3 thin films on Bi4Ti3O12/CeO2/yttria-stabilised-zirconia buffered Si(001) substrates: Electrical, magnetic and 1/f noise properties

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates

“…is the highest value reported for La 0.7 Sr 0.3 MnO 3 grown with or without a buffer layer on silicon substrates. [36][37][38]44,47,[51][52][53][54][55] Moreover, the electrical resistivity value at 300 K is 1.5 mΩ cm, which is quite similar to bulk La 0.7 Sr 0.3 MnO 3 , 56 and lower by a factor 2 compared to what we have obtained in the La 0.7 Sr 0.3 MnO 3 films of comparable thickness deposited on SrTiO 3 /Si by the same MBE technique. We also measured the electrical resistivity of a single CaTiO 3 layer on (100) Si substrate to rule out the effect of the oxygen content on the physical properties of CaTiO 3 .…”

“…We demonstrate here that La 0.7 Sr 0.3 MnO 3 films deposited on CaTiO 3 /Si indeed showed enhanced electrical properties (e.g., lower electrical resistivity and 1/ f noise, and high temperature of the metal-to-insulator transition) as well as enhanced magnetic properties (higher Curie temperature) compared to other epitaxial La 0.7 Sr 0.3 MnO 3 thin films deposited on buffered silicon substrates. [33][34][35][36][37][38][39] We grew epitaxial CaTiO 3 thin films on (100) Si by reactive molecular-beam epitaxy (MBE). The native SiO 2 layer was removed from the (100) Si substrate using a strontium assisted process.…”

Experimental evidence of correlation between 1/fnoise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3thin films

“…Figure 3 shows the dependence of the measured normalized Hooge parameter on the LSMO out-of-plane deformation, the electrical resistivity at 300 K, and the temperature of metal-to-insulator transition. Among the investigated samples, the 1/f noise level showed no strong correlation with ε [0 0 1] or electrical resistivity at 300 K. Low quality epitaxial films, as judged by high FWHM of the 0 0 2 LSMO peak in the ω-scan configuration (about 1 • ), usually do show higher 1/f noise associated with an increase in the electrical resistivity at 300 K as previously shown for LSMO films deposited on yttria-stabilized-zirconia based buffered silicon substrates [39]. In this study, all films, except the 5 nm thick LSMO/STO, showed electrical resistivity values in the 1.4-4.5 m cm range, i.e.…”

Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular‐beam epitaxy

“…During the past years, many materials have been considered as buffer layer for growing epitaxial La 0.7 Sr 0.3 MnO 3 (LSMO) thin films on silicon 6–11. Polycrystalline LSMO films with a metal‐to‐insulator transition temperature T MI of 225 K are generally obtained if grown on silicon covered by the native amorphous SiO x layer 6.…”