1974
DOI: 10.1103/physrevb.10.2915
|View full text |Cite
|
Sign up to set email alerts
|

Hall effect in iron from 1 to 250 K and to 150 kOe

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
10
0

Year Published

1978
1978
2019
2019

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 21 publications
(11 citation statements)
references
References 29 publications
1
10
0
Order By: Relevance
“…The co-occurrent sign changes of both R 0 and σ AH strongly verify the globally varying curvature near the Fermi surface. In contrast, for Fe and Mn 5 Ge 3 films, the R 0 changes from the negative to positive near 80 K whereas the σ AH is always positive below room temperature, and the sign change is attributed to the change of the conductivity ratio of d and s bands instead of the global curvature change near the Fermi surface [31][32][33] . For NiPt thin films, the σ AH rather than R 0 changes the sign with T , which is attributed to other reasons rather than the global change of the curvature near the Fermi surface 34 .…”
mentioning
confidence: 89%
“…The co-occurrent sign changes of both R 0 and σ AH strongly verify the globally varying curvature near the Fermi surface. In contrast, for Fe and Mn 5 Ge 3 films, the R 0 changes from the negative to positive near 80 K whereas the σ AH is always positive below room temperature, and the sign change is attributed to the change of the conductivity ratio of d and s bands instead of the global curvature change near the Fermi surface [31][32][33] . For NiPt thin films, the σ AH rather than R 0 changes the sign with T , which is attributed to other reasons rather than the global change of the curvature near the Fermi surface 34 .…”
mentioning
confidence: 89%
“…It seems that the phonon side jump contribution should be similar to that of static impurities, and hence it should be insensitive to temperature (T ) [23,29,30]. This speculation has gained support from experiments performed at elevated temperatures where the longitudinal resistivity shows linear in T dependence [31][32][33]. Recently, researchers do realize that the sidejump from phonon and impurity scattering can be different, thereby the change of their relative importance with temperature can lead to T -dependent behavior [15,34].…”
Section: Introductionmentioning
confidence: 99%
“…α 0 , c, c 0 and c 00 do not depend on the density of scatterers thus serve as scaling parameters, and ρ 0 tuned via changing the density of scatterers plays the role of a scaling variable. On the other hand, in many experiments the resistivity is tuned through temperature (T ) in a wide range where the electron-phonon scattering is important [8,9,[11][12][13][16][17][18][19]. For this scattering, most previous theoretical and experimental researches suggest the scaling relation [8,9,17,26,28,29] − ρ AH,1 = (c + c 1 + c 11 ) ρ 2 1 ,…”
mentioning
confidence: 99%
“…In time-reversal broken multiband electronic systems with strong spin-orbit coupling, the anomalous Hall effect originates from both the momentum-space Berry curvature and scattering off disorder [5][6][7]. In experiments the scaling relations linking the anomalous Hall resistivity ρ AH to the longitudinal resistivity ρ play the central role in identifying various contributions [8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”
mentioning
confidence: 99%
See 1 more Smart Citation