Theory of the phonon side-jump contribution in anomalous Hall effect

Xiao, Cong; Liu, Ying; Xie, Ming; Yang, Shengyuan A.; Niu, Qian

doi:10.1103/physrevb.99.245418

Cited by 8 publications

(5 citation statements)

References 70 publications

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“…When applied to the side-jump anomalous Hall effect, the high-T and low-T asymptotic behaviors derived within this approximation are the same as those obtained without this approximation [34]. Quantitative deviations only appear in the intermediate regime and are not essentially important.…”

supporting

confidence: 62%

Scaling parameters in anomalous and nonlinear Hall effects depend on temperature

2019

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In the study of the anomalous Hall effect, the scaling relations between the anomalous Hall and longitudinal resistivities play the central role. The scaling parameters by definition are fixed as the scaling variable (longitudinal resistivity) changes. Contrary to this paradigm, we unveil that the electron-phonon scattering can result in apparent temperature-dependence of scaling parameters when the longitudinal resistivity is tuned through temperature. An experimental approach is proposed to observe this hitherto unexpected temperature-dependence. We further show that this phenomenon also exists in the nonlinear Hall effect in nonmagnetic inversion-breaking materials and may help identify experimentally the presence of the side-jump contribution besides the Berry-curvature dipole.

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supporting

confidence: 62%

Scaling parameters in anomalous and nonlinear Hall effects depend on temperature

2019

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“…( 2), here both l and t modes are considered, as summarized in Table I. We employ a semiclassical approach to deal with the phonon-assisted valley Hall response, by which the deformation type has been discussed [14]. New types of electron-phonon coupling are systematically analyzed in our paper [42].…”

Section: Types Of Phonon (δRmentioning

confidence: 99%

“…There are growing evidences in 2D materials [4][5][6][7] which underline the significance of coupling between electrons and phonons, or their classical description, i.e., random strain fluctuations [5,6]. Up to now, most transport studies of electron-phonon coupling concentrate on the longitudinal direction or spin relaxation [8][9][10][11][12], however, little attention has been paid to the transverse transport [13][14][15], e.g., anomalous, thermal, spin or valley Hall effect. Experimentally, transverse transport measurements have been realized in several 2D materials [16][17][18][19][20], whose results suggest an important role of electron-phonon coupling for realistic samples [21].…”

mentioning

confidence: 99%

Impact of novel electron-phonon coupling mechanisms on valley physics in two-dimensional materials

Shan

2020

Phys. Rev. B

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We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous valley Hall response since they fall into the same universality class of pseudospin structure. However, such argument fails for the coupling mechanism with position-dependent Fermi velocity. For the isotropic case, a significant valley Hall effect occurs near charge neutrality similar to the bond-length change, whereas for the anisotropic case, the geometric valley transport is suppressed, akin to the deformation potential. Gap opening mechanism by nonuniform strain is found to totally inhibit the valley Hall transport, even if the dynamics of strains are introduced. By varying gate voltage, a tunable phonon-assisted valley Hall response can be realized, which paves a way toward rich phenomena and new functionalities of valley acoustoelectronics.

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“…Directions of future research include further studies of inelastic skew scattering and side jump contributions due to electron-electron interaction [105] in the hydrodynamic regime or electron-phonon interaction [106]. It should be possible to readily incorporated those using a similar diagrammatic technique as exposed in Fig.…”

Section: Discussionmentioning

confidence: 99%

Quantum kinetics of anomalous and nonlinear Hall effects in topological semimetals

König,

Levchenko

2021

Preprint

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We present a systematic microscopic derivation of the semiclassical Boltzmann equation for band structures with the finite Berry curvature based on Keldysh technique of nonequilibrium systems. In the analysis, an ac electrical driving field is kept up to quadratic order, and both cases of small and large frequencies corresponding to intra-and interband transitions are considered. In particular, this formulation is suitable for the study of nonlinear Hall effect and photogalvanic phenomena. The role of impurity scattering is carefully addressed. Specifically, in addition to previously studied side-jump and skew-scattering processes, quantum interference diffractive contributions are now explicitly incorporated within the developed framework. This theory is applied to multifold fermions in topological semimetals, for which the generic formula for the skew scattering rate from the Pancharatnam phase is obtained along with the corresponding anomalous Hall conductivity.

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Theory of the phonon side-jump contribution in anomalous Hall effect

Cited by 8 publications

References 70 publications

Scaling parameters in anomalous and nonlinear Hall effects depend on temperature

Scaling parameters in anomalous and nonlinear Hall effects depend on temperature

Impact of novel electron-phonon coupling mechanisms on valley physics in two-dimensional materials

Quantum kinetics of anomalous and nonlinear Hall effects in topological semimetals

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