In the study of the anomalous Hall effect, the scaling relations between the anomalous Hall and longitudinal resistivities play the central role. The scaling parameters by definition are fixed as the scaling variable (longitudinal resistivity) changes. Contrary to this paradigm, we unveil that the electron-phonon scattering can result in apparent temperature-dependence of scaling parameters when the longitudinal resistivity is tuned through temperature. An experimental approach is proposed to observe this hitherto unexpected temperature-dependence. We further show that this phenomenon also exists in the nonlinear Hall effect in nonmagnetic inversion-breaking materials and may help identify experimentally the presence of the side-jump contribution besides the Berry-curvature dipole.
The valley-contrasting orbital magnetic moment of Bloch electrons allows the lifting of valley degeneracy by an out-of-plane magnetic field. We demonstrate that this leads to negative magnetoresistance, utilizing a gapped two-dimensional multi-valley model as an example. An intuitive physical picture in terms of the increased carrier density from a magnetic gating effect is proposed for this negative magnetoresistance. In particular, giant negative magnetoresistance is achieved after one of the two valleys is depleted by the magnetic field. This new mechanism of negative magnetoresistance is argued to be relevant in ionic-liquid gated gapped graphene with small effective mass.
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