Growth of strained layer superlattices. II

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

“…However, two types of interface can be epitaxied along the [0 0 1] growth direction because the InAs/GaSb heterojunction has no common element: an In/As/Ga/Sb sequence (''GaAs-like'' interface), or an As/In/Sb/Ga sequence (''InSb-like'' interface). Without a specifical shutter sequence, the InAs-on-GaSb interface is naturally ''InSb-like'' while the GaSb-on-InAs interface is ''GaAs-like'' and SLs with ''InSb-like'' interfaces have been found to have greater structural and luminescence properties [23][24][25][26][27][28]. Consequently, the InSb layer is inserted just after the InAs layer to eliminate ''GaAs-bonds'' and to promote strain compensation.…”

Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

“…4(a) also give us useful information about the material qualities [19]. The consistent of the peak position at 236 cm À 1 for the three samples shows that their GaSb and InAs layers are almost pure binary.…”

Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector

“…If the InAs is heavily doped and its total length is not more than several micrometres, only a little incident light will be absorbed in the QWS, as shown below. The growth of InAs/GaSb heterostructure has already been reported [14]. So a reflector which is made of InAs/GaSb QWS is feasible in a GaInAsSb/GaSb RCE photodetector operating at 2.4 µm.…”