Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

Li, Li-Gong; Liu, Shuman; Luo, Shuai; Yang, Tao; Wang, Lijun; Liu, Junqi; Liu, Fengqi; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo

doi:10.1016/j.jcrysgro.2012.08.009

Cited by 7 publications

(6 citation statements)

References 21 publications

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“…Nedelcu's group [154] proposed a complex scheme with a smooth InAs → InAsSb → InGaSb → GaSb → InGaSb → InAsSb → InAs structure achieving optimal morphology and low strain. In addition, Li et al [160,161] selected As 0.1 Sb 0.9 interfaces over InAsSb as an option to compensate the strain of the SLs on the GaSb substrate, which achieved a smooth surface with an root mean square (RMS) roughness of 0.7 nm and strong absorption coefficient in the MWIR region. Arikata et al [162] demonstrated LWIR T2SLs by applying simple InSb interface layers grown at 500 • C, which addressed the in-plane unbalanced strain, obtaining defect-free 200-period SLs with an intense PL peak at 6.1 µm and an external QE of 31% at 3.5 µm.…”

Section: Growth Of Inas/gasb T2slsmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Section: Growth Of Inas/gasb T2slsmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Moreover, it has been shown that the MOCVD growth of short periods InAs/GaSb and InAs/InAsSb T2SL structures is further limited by the possibility of decomposition and degradation of the interface quality during growth. [ 131–135 ] Consequently, Huang et al [ 136–139 ] have alternatively demonstrated the first MOCVD growth of Al‐free InAs/GaSb T2SL PNn barrier structure, which was comprised of a p ‐type mid‐wavelength superlattice (MWSL) contact layer ( P ‐region) and an n ‐type MWSL barrier layer ( N ‐region) and an n ‐type long‐wavelength superlattice (LWSL) absorber layer ( n ‐region), which resulted in high‐quality material growth and high‐performance T2SL detectors. For more details about the difficulties associated with the MOCVD growth of Sb‐based and other III–V semiconductors, the reader is directed to the review work published by Biefeld.…”

Section: Fundamental Materials Properties Of the Type‐ii Superlatticementioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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“…The growth of the superlattice takes place under different thermal conditions (below 400 °C [ 12 ]) than those needed for optimal growth of the constituent layers (~430 °C for InAs [ 13 ], ~520 °C for GaSb [ 14 ]). As a result, the formation of many types of defects (stacking faults, vacancies, interstitial substitutional, and others) can occur [ 15 ]. On the other hand, the strain energy is accumulated in InAs/GaSb structure due to the lattice mismatch between interfaces and GaSb substrate.…”

Section: Introductionmentioning

confidence: 99%

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

et al. 2021

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In this paper, he study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 106 cm−2 –#SL400, 1.01 × 106 cm−2 –#SL300, 0.51 × 106 cm−2 –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300.

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Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

Cited by 7 publications

References 21 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

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