The authors report on a type-II InAs∕GaSb strained layer superlattice (SLS) photodetector using an nBn design that can be used to eliminate both Shockley-Read-Hall generation currents and surface recombination currents, leading to a higher operating temperature. We present such a SLS based structure with a cutoff wavelength of 5.2μm at room temperature. Processed devices exhibited a quantum efficiency around 18%, and a shot-noise-limited specific detectivity ∼109Jones at 4.5μm and 300K, which are comparable to the state of the art values reported for p-i-n photodiodes based on strained layer superlattices.

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Abstract-In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germaniumon-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the telecommunication wavelength range and the mid-infrared.