MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

“…The nid short period GaSb(10 MLs)/InAs(10 MLs)/InSb(1 ML) SL is composed of 300 periods, corresponding to a total active zone thickness of 1.92 µm. Further details of the epitaxial growth and SL structural characterizations have been published previously [8]. This kind of structure exhibits room temperature cut-off energy near 220 meV (5.6 µm) [9].…”

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

“…These results agree well with the concept of growing a strain-compensated InAs/GaSb-SL by intentionally introducing an InSb ML, and support the preferred formation of a In-Sb interfacial bond configuration. Finally, the maximum PL efficiency is achieved for SLs with insertion of 1 ML InSb interfacial layers [20] and excellent absorption spectra are obtained from such samples [23]. Room temperature operation of photo-detectors operating in the mid-IR has been demonstrated [24].…”

“…In this work we have investigated the interface properties of 10 MLs GaSb/10 MLs InAs SLs where 1ML InSb has been inserted at each period [20]. The samples have been grown at 390 °C in a RIBER Compact 21 system equipped with both As-and Sb-valved cracker cells.…”

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

“…The SL growth temperature is usually 400 C in order to maintain a good quality of the InSblike interfaces. 21 However, the GaSb binary compound is a)…”

“…Sample A was grown at 450 C with optimized growth conditions for high temperature and sample B at 400 C using usual growth conditions. 21 The GaSb-rich SL p-i-n structures studied consist of a 200 nm thick p-doped (P $ 1 Â 10 18 cm…”