Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector

Abstract

A resonant-cavity-enhanced (RCE) PIN photodetector has high bandwidth and high sensitivity compared with traditional PIN photodetectors. In this paper, the structure of a RCE GaInAsSb/GaSb photodetector has been designed so that the light is incident from the substrate. The top reflector for this structure is made of 9.5-15.5 periods of InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods of SiO 2 /Si QWS. An antireflection coating with more than 99% transmissivity is deposited on the substrate surface. A simulation shows that the quantum efficiency could be more than 90% at the operating wavelength 2.4 µm. The device has two spectral response peaks, which could make the device function as a double-colour detector.

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

“…We already published the first results on these sensors demonstrating a single narrow line with high peak quantum efficiency [7]. With HgCdTe and GaSb RCEDs, simulations have been published [8,9], and preliminary structures have been realized with InAs [10]. With lead-chalcogenides, first results of photoconductive sensors are available, too [11].…”

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

“…With HgCdTe and GaSb RCEDs, simulations have been published [8,9], and preliminary structures have been realized with InAs [10]. With lead-chalcogenides, first results of photoconductive sensors are available, too [11].…”