Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Li, Jiakai; Dehzangi, Arash; Wu, Donghai; McClintock, Ryan P; Razeghi, Manijeh

doi:10.1016/j.infrared.2020.103552

Cited by 6 publications

(5 citation statements)

References 28 publications

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“…A schematic diagram and band structure of an APD under operation mode is shown in figure 20(a); a multiplication region is formed by applying a relatively high bias voltage for the avalanche to realize high gain. As gain materials, Sb-based SLs have the advantages of higher material uniformity, better bandgap tunability, and Auger recombination suppression [202,203] while, compared to MCT-based APDs that have been dominant so far, APDs based on Sb-strained SLs are still under development. Early results have shown impressive gains of 6 at 150 K and 7.4 at 77 K under a −6.5 V bias voltage [204], but the main problem lies in the fact that the excess noise factor is quite limited due to the relatively small difference in the ionization rates.…”

Section: High Sensitivity Pds With Internal Gainmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Section: High Sensitivity Pds With Internal Gainmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Superlattice (SL) is a periodic heterostructure of two or more alternating layers whose bandgap can be engineered by changing the thickness of the constituent layers. Type-II superlattice (T2SL) is emerging as a popular material for photodetectors (PDs), − photodiodes, − avalanche photodetectors (APDs), , light-emitting diodes (LEDs), , lasers, − and phototransistors. , Due to its advantages, such as suppressed Auger recombination, , reduced tunneling current, and the flexibility of incorporating unipolar barriers, T2SL-based devices are theoretically expected to achieve higher performance levels than MCT detectors. , …”

Section: Introductionmentioning

confidence: 99%

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

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“…The state-of-the-art commercial MWIR photodetectors utilize an HgCdTe material system while it suffers from several limitations such as low yields, limited array size, high cost and material fragility [8,9]. In recent years, the strain-balanced Antimony-based superlattices such as InAs/InAsSb T2SLs have received a lot of attention and experienced vigorous development, since the material system has wide detection wavelengths, which makes it a strong candidate for infrared photodetectors [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Saroj

Slivken

et al. 2022

Photonics

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In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0 × 10−5 A/cm2 and the R0A value of ~3.0 × 102 Ω∙cm2 under −20 mV, which yielded a specific detectivity of 4.0 × 1011 cm·Hz1/2/W at 3.7 μm. At 150 K, the planar device showed a dark current density of 6.4 × 10−5 A/cm2 and a quantum efficiency of 49% at ~3.7 μm under −20 mV, which yielded a specific detectivity of 2.0 × 1011 cm·Hz1/2/W.

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Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Cited by 6 publications

References 28 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

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