Growth of high purity InP by metalorganic MBE (CBE)

Heinecke, H.; Baur, B.; Höger, R.; Miklis, A.

doi:10.1016/0022-0248(90)90352-l

Cited by 65 publications

(8 citation statements)

References 17 publications

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“…͑b͒ Substrate temperature vs background donor concentration in grown film ͑Nd measured by C -V technique͒.550°C. These trends are similar to those of samples prepared by metalorganic MBE 4,5. …”

supporting

confidence: 85%

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Franklin¹,

Kuo²,

Liu³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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supporting

confidence: 85%

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Franklin¹,

Kuo²,

Liu³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…From the reported DAP emission energies for various acceptors in InP, the acceptor could be either carbon or a group II impurity such as Zn, Mg, Ca, and Be. 37,3s Previous studies by Heinecke et al 16 and Morishita et a1.17 reported that the intensity ratio for the impurity and exciton peaks decreased with increasing growth temperature.…”

Section: Resultsmentioning

confidence: 95%

“…The reason why the growth rate is lower for the two samples grown at 465~ is not clear. Heinecke et al 16 reported that the growth rate was independent of temperature in the range of 470 to 540~ for InP growth using PH 3 and TMIn. The effect of the V/III ratio on the growth rate is shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.

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“…The PL peak at 1.417 eV is assigned to D 0 -X transition and the transition at 1.38 eV is attributed to D 0 -A 0 transition. 12 The free exciton transition, which is not well resolved in the PL spectrum, is observed by ER as a sharp peak ͑FWHMϭ1.37 meV͒ at 1.4185 eV.…”

Section: Resultsmentioning

confidence: 97%