Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Franklin, J.; Kuo, Hao‐Chung; Liu, J.; Vizcarra, R.; Pao, Y.C.; Cheng, K. Y.; Pickrell, Gregory

doi:10.1116/1.591444

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2003

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“…The main thrust of this paper is to extend and expand the work in [9] to consider optimum doping profiles for fundamental-mode operation at W-band (rather than D-band) frequencies. Such a study is timely, particularly with regard to the growing opportunities for civilian (e.g., automotive radar at 77 GHz [12]) as well as military applications in this frequency range. Our work differs from that in [9] in several respects that are worth mentioning from the outset.…”

Section: Introductionmentioning

confidence: 99%

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Dunn¹,

Kearney²

2003

Semicond. Sci. Technol.

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InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

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Section: Introductionmentioning

confidence: 99%

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Dunn¹,

Kearney²

2003

Semicond. Sci. Technol.

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show abstract

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Abstract: Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

Cited by 1 publication

References 9 publications

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

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