We have investigated the effects of rapid thermal annealing on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high electron mobility transistor structures grown by molecular beam epitaxy. Hall effect and photoluminescence measurements on samples with In0.22Ga0.78As and In0.28Ga0.72As channels reveal a temperature-dependent degradation in sheet charge density, Hall mobility, and photoluminescence response. The structures were essentially stable through the temperature range used in normal device processing. However, annealing temperatures greater than 700 °C resulted in strain relaxation and layer intermixing, especially for the In0.28Ga0.72As sample.
The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.
It is well known that PH3 is highly toxic and safer alternatives need to be found. TBP has a favorable vapor pressure at room temperature and decomposes at a lower temperature than PH3. Results of a systematic investigation of the pyrolysis of novel phosphorous (P) precursors for chemical beam epitaxy (CBE) that are safer than phosphine will be presented. In particular, three topics pertinent to CBE will be presented: (i) technical details on the pyrolysis conditions and growth using several novel condensed-phase P-precursors, including tertiarybutylphosphine (TBP); (ii) a custom-designed gas-source group V cracker cell; and (iii) methods to reduce the cracking temperature of P-containing sources.
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