Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy

et al. 1998

Self Cite

InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

mentioning

confidence: 99%

Self-forming InAs/GaP quantum dots by direct island growth

León

Lobo

et al. 1998

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“…The growth of phosphides was achieved by a valved-phosphorus cracker. 12 Reflection high-energy electron diffraction ͑RHEED͒ was used to monitor the surface morphology as well as the growth rate and surface V/III ratio. The quality of the GaP buffer layer is critical to the growth of InAs as indicated by RHEED and transmission electron microscopy ͑TEM͒ observations.…”

Section: ͓S0003-6951͑96͒05033-4͔mentioning

confidence: 99%

Incoherent interface of InAs grown directly on GaP(001)

Chang

Woodall

1996

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We report molecular beam epitaxial growth of InAs on GaP(001), which has the largest lattice mismatch (11%) among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dimensional and two-dimensional layer-by-layer growths under As-stable and In-stable conditions, respectively. In both cases, a regular network of pure edge-type (90°) misfit dislocations with a spacing of 4 nm was formed directly at the heterointerface, which corresponds to 85% of degree of strain relaxation. The epilayers grown under In-stable conditions have relatively smooth surfaces with low threading dislocation densities. This is owing to the fact that the interface misfit dislocations were exclusively of the edge-type which have no threading component and which relieve strain most effectively. The results demonstrate the ability to control the growth mode as well as the misfit dislocation nucleation type.

“…The details of growth were reported elsewhere. 15 Be-doped GaP and In 0.49 Ga 0.51 P epilayers were grown on GaP͑100͒ and GaAs͑100͒ substrates, respectively. In x Ga 1Ϫx P (x 0.49) was grown lattice mismatched on GaP͑100͒ substrates using a linearly graded buffer layer.…”

Section: ͓S0003-6951͑96͒03924-1͔mentioning

confidence: 99%

Nonalloyed ohmic contacts to heavily Be-doped GaP and InxGa1−xP

Tagare

Woodall

1996

Self Cite

Nonalloyed ohmic contacts, with contact resistances as low as 9 μΩ cm2, are obtained to p++ GaP using Ni and Ti–Au. Very high p-type doping (5×1019 cm−3) is achieved in GaP using a growth temperature of 400 °C followed by an ex situ high-temperature rapid thermal anneal. The p-type dopant is beryllium and the films are grown by solid source molecular beam epitaxy equipped with a valved phosphorus cracker. A record high hole concentration (2×1019 cm−3) is reported in In0.49Ga0.51P by using a growth temperature of 350 °C.