Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications

Casallas-Moreno, Y.L.; Villa-Martínez, Gerardo; Ramírez-López, M.; Rodríguez-Fragoso, P.; Gómez-Herrera, M.L.; Pérez-González, M.; Escobosa, A.; Tomás, S.A.; Herrera-Pérez, J. L.; Mendoza-Álvarez, J. G.

doi:10.1016/j.jallcom.2019.151690

Cited by 11 publications

(3 citation statements)

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“…Deconvolution methods for the core-level peaks were done imposing a minimal quantity of constraints in order to avoid influence, linked to presumption knowledge, on the obtained results. Such constraints, applied to the XPS doublets, include the peak area ratio, the peak-to-peak spin-orbit splitting, and the peak Full-Width at Half-Maximum (FWHM), within experimental errors [34] . These criteria are governed by quantum mechanics fundamentals.…”

Section: Resultsmentioning

confidence: 99%

Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots

Granada-Ramírez

Arias-Cerón

Pérez-González

et al. 2020

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots

Granada-Ramírez

Arias-Cerón

Pérez-González

et al. 2020

Applied Surface Science

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“…A quaternary III-V compound semiconductor is a chemical compound including four elements, for example Gallium Indium Arsenide Antimonide (GaxIn1 -xAsySb1 -y) [12][13][14][15][16] (0 ≤ x ≤ 1 and 0 ≤ y ≤ 1) whose material characteristics have been much discussed [17]. It is a very promising material for optoelectronics such as solar cells, photodiodes and thermophotovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

Mostefai¹

2022

J. Nano- Electron. Phys.

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Semiconductor materials are categorized by their chemical composition. There are some basic semiconductors, for example silicon (Si) and germanium (Ge), which are part of group IV elements. There are compound semiconductors, binary, ternary and quaternary, and the most common are III-V semiconductors. One of them is a quaternary semiconductor compound GaxIn1 -xAsySb1 -y (Gallium Indium Arsenide Antimonide) composed of group III elements, for example, gallium (Ga) and indium (In), and group V elements, for example, arsenide (As) and antimonide (Sb). Semiconductors constituted of III-V compounds have great potential for technological applications. They are used in advanced optoelectronic devices, microelectronics and photovoltaic cells due to their properties (robust, high thermal conductivity, direct band gap, etc.). They have been extensively studied over the past decades due to the high quality of these materials and their exceptional optical and electronic characteristics. This work describes the energy gap Eg as a function of x at T = 300 K, effective density of states (Nc and Nv) in the conduction and valence bands, intrinsic carrier concentration ni as a function of temperature T for GaxIn1 -xAsySb1 -y semiconductors (compositions lattice-matched to GaSb and InAs), and temperature dependence of the energy band gap Eg for GaSb and InAs using MATLAB.

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“…In heteroepitaxy of solid solutions on binary substrates, the array mismatch between the thin film and the substrate, as well as the substrate misorientation [7] have a significant influence on the crystal structure and morphology of the deposited material. Previously, researchers have studied GaSb-based heterostructures that do not contain Bi [8][9][10]. The molecular beam epitaxy of GaInAsSb solid solution with Bi fraction of 0.13% on GaSb (100) substrates [5] has been known to be realized by now.…”

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Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

Pashchenko

O.V.

Lunin

et al. 2022

Technical Physics Letters

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GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates with a misorientation of 6o between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the ?layer-substrate? heterointerface decreases. Keywords: solid solutions, GaInAsSbBi, GaSb, III-V compounds.

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Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications

Cited by 11 publications

References 50 publications

Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots

Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

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