In order to be able to realize out the mixing detection or harmonic generation functions, a non-linear circuit is necessary for different existing devices and for performing these types of operation, in the submillimetric and / or far-infrared domains (10 μm ≤ λ ≤ 1 mm), the spectral margin covered by this radiation ranging from 300 GHz to 30 THz. In these frequency domains, non-linear point devices are often used, unlike the optical domain where massive devices are widely used, among them the Josephson Junction (JJ) is mainly used in the case where low noise is desired. This paper present electrical characteristic of Josephson Junction (JJ) using Approximation in the sense of Least Squares, for different value of Cj, T, Rj.
The basis of operation of modern electronics components -diodes, transistors, etc. -is the ability to control the electrical conductivity of semiconductors by doping, that is, by introducing impurities into the material. Semiconductors doped differently can be brought into contact to create junctions for controlling the direction and quantity of the current flowing through the assembly. Some examples of semiconductors are silicon (Si), germanium (Ge) and gallium arsenide (GaAs). These substances are close to insulators (intrinsic semiconductors), but the addition of a small amount of dopant leads to a strong drop in electrical resistance, turning them into conductors. Depending on the kind of dopant, n-type or p-type semiconductor can be made. Silicon is a critical element for fabricating most electronic circuits. Silicon (Si) is a pure crystalline semiconductor material; it is the well-known and most used material. After silicon (Si), gallium arsenide (GaAs) is the second most common semiconductor used in laser diodes, solar cells, microwavefrequency integrated circuits and others. This paper presents a comparison between the energy band gap Eg as a function of temperature T, energy band gap Eg as a function of doping density and intrinsic carrier density ni of silicon (Si) and gallium arsenide (GaAs) using MATLAB.
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