Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

Abstract

Semiconductor materials are categorized by their chemical composition. There are some basic semiconductors, for example silicon (Si) and germanium (Ge), which are part of group IV elements. There are compound semiconductors, binary, ternary and quaternary, and the most common are III-V semiconductors. One of them is a quaternary semiconductor compound GaxIn1 -xAsySb1 -y (Gallium Indium Arsenide Antimonide) composed of group III elements, for example, gallium (Ga) and indium (In), and group V elements, for example, arsenide (As) and antimonide (Sb). Semiconductors constituted of III-V compounds have great potential for technological applications. They are used in advanced optoelectronic devices, microelectronics and photovoltaic cells due to their properties (robust, high thermal conductivity, direct band gap, etc.). They have been extensively studied over the past decades due to the high quality of these materials and their exceptional optical and electronic characteristics. This work describes the energy gap Eg as a function of x at T = 300 K, effective density of states (Nc and Nv) in the conduction and valence bands, intrinsic carrier concentration ni as a function of temperature T for GaxIn1 -xAsySb1 -y semiconductors (compositions lattice-matched to GaSb and InAs), and temperature dependence of the energy band gap Eg for GaSb and InAs using MATLAB.

Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor

“…Mostefai (27) studied on energy gap (𝐸𝑔) as a function of different composition 𝑥 and 𝑦 in 𝐺𝑎 𝑥 𝐼𝑛 1−𝑥 𝐴𝑠 𝑦 𝑆𝑏 1−𝑦 at 𝑇 = 300 𝐾 and intrinsic carrier concentration (𝑛𝑖) as a function of temperature and effective density of states 𝑁 𝑐 and 𝑁 𝑣 in the conduction band and valence band, respectively. So far several articles worked on 𝐺𝑎𝐴𝑠 1−𝑦 𝑆𝑏 𝑦 and 𝐼𝑛 1−𝑥 𝐺𝑎 𝑥 𝐴𝑠 (10,28,29).…”