It is a generally
accepted perspective that type-II nanocrystal
quantum dots (QDs) have low quantum yield due to the separation of
the electron and hole wavefunctions. Recently, high quantum yield
levels were reported for cadmium-based type-II QDs. Hence, the quest
for finding non-toxic and efficient type-II QDs is continuing. Herein,
we demonstrate environmentally benign type-II InP/ZnO/ZnS core/shell/shell
QDs that reach a high quantum yield of ∼91%. For this, ZnO
layer was grown on core InP QDs by thermal decomposition, which was
followed by a ZnS layer via successive ionic layer adsorption. The
small-angle X-ray scattering shows that spherical InP core and InP/ZnO
core/shell QDs turn into elliptical particles with the growth of the
ZnS shell. To conserve the quantum efficiency of QDs in device architectures,
InP/ZnO/ZnS QDs were integrated in the liquid state on blue light-emitting
diodes (LEDs) as down-converters that led to an external quantum efficiency
of 9.4% and a power conversion efficiency of 6.8%, respectively, which
is the most efficient QD-LED using type-II QDs. This study pointed
out that cadmium-free type-II QDs can reach high efficiency levels,
which can stimulate novel forms of devices and nanomaterials for bioimaging,
display, and lighting.