Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

Pashchenko, A. S.; O.V., Devitsky; Lunin, L. S.; Lunina, M. L.; O.S., Pashchenko

doi:10.21883/tpl.2022.05.53481.19164

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…In PLD at the laser fluence of more than 2 J/cm 2 , the uniformity of the expansion of the target components increases, but the growth kinetics and properties of the grown films change simultaneously [4]. As applied to III-V and CIGS semiconductor solid solutions, if the target contains more than one group III metal, then droplets can be formed on the surface [5,6], the morphology deteriorates, and the layer stoichiometry is violated [7]. To understand these processes under PLD conditions, in this work, we study the properties of films grown with the laser fluence of 2.3 J/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

Pashchenko,

Devitsky,

Lunin

et al. 2023

Nanosystems: Phys. Chem. Math.

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GaInAsP and GaInAsSbBi solid solutions were grown on GaP (111) substrates by pulsed laser deposition using a laser fluence of 2.3 J/cm 2 . Energy Dispersive X-ray microanalysis, atomic force microscopy, and Raman spectroscopy were used for analysis of the elemental composition and study of the surface morphology and chemical bonds of the obtained solid solutions. It was found that at constant growth temperature and the fluence of 2.3 J/cm 2 , the elemental composition of the film has a significant effect on the growth kinetics. Surface-active elements (Sb and Bi) in the composition of the solid solution lead to a change in the surface diffusion of In and Ga, which is accompanied by a decrease in roughness. It was established that the films growth in the Volmer-Weber mode. The grown films are nanotextured with a predominant orientation in the direction of growth (111). KEYWORDS pulsed laser deposition, solid solutions, GaP, semiconductors, III--V compounds ACKNOWLEDGEMENTS This work was funded as part of a state order to the Southern Scientific Centre of the Russian Academy of Sciences, projects No. 122020100254-3 (studies of chemical composition and morphology) and No. 122020100326-7 (Raman studies). The growth of experimental samples was carried out using the resources of Center for Collective Use of North Caucasus Federal University and with the financial support of the Ministry of Education and Science of Russia, the unique identifier of the project is RF-2296.61321X0029 (agreement No. 075-15-2021. The authors express their gratitude to the North Caucasian Federal University for their assistance in the framework of the competition for supporting projects of scientific groups and individual scientists of the university.

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Section: Introductionmentioning

confidence: 99%

Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

Pashchenko,

Devitsky,

Lunin

et al. 2023

Nanosystems: Phys. Chem. Math.

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“…Thin YAG:Ce 3+ films were fabricated using an experimental PLD system [9,10]. A target was formed by uniaxial cold pressing of stoichiometric YAG:Ce 3+ powder with a composition characterized by formula Y 2.98 Ce 0.02 Al 5 O 12 .…”

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confidence: 99%

Synthesis and structural properties of thin YAG:Ce-=SUP=-3+-=/SUP=- films produced by pulsed laser deposition

Devitsky

Кравцов

2023

Technical Physics Letters

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Thin YAG:Ce3+ films were synthesized by pulsed laser deposition. For the first time, the dependences of the thickness, phase composition, and photoluminescence of films on the substrate temperature during synthesis were studied. It is shown that, regardless of the synthesis temperature in the range of 100-400oC, the resulting films had a polycrystalline structure. With an increase in the substrate temperature, an increase in the film growth rate was observed. Despite the polycrystalline structure of the films, after annealing at 900oC, YAG:Ce3+ thin films exhibited pronounced photoluminescence, which opens up the possibility of their application as modifying coatings for photoconverters, as well as for X-ray detectors. Keywords: pulsed laser deposition, YAG:Ce3+, functional coatings, x-ray diffraction, luminescence.

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Особенности Выращивания Многокомпонентных Твердых Растворов Импульсным Лазерным Напылением, "Наука Юга России"

Лунин,

Девицкий,

Пащенко

et al. 2023

Science in the South of Russia

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На примере выращенных твердых растворов GaInAsP и GaInAsSbBi на подложках GaP с кристаллографической ориентацией (111) изучены особенности импульсного лазерного напыления многокомпонентных твердых растворов на основе соединений III–V групп. Твердые растворы выбраны исходя из обозначенных трудностей при выращивании методом импульсного лазерного напыления в связи с тем, что состоят из двух металлов III группы и трех легколетучих металлоидов V группы. Вследствие актуальности их практического использования для выращивания оптоэлектронных гетероструктур методами рентгеновского энергодисперсионного микроанализа, сканирующей электронной микроскопии и рамановского рассеяния проведен анализ состава твердых растворов и их морфологии. Экспериментально показано, что комбинирование лазерного флюенса и добавления в состав поверхностно-активных элементов, таких как Bi или Sb, позволяет снизить плотность капель на поверхности выращенной пленки на три порядка, а их средний размер уменьшить с 300 до 45 нм. Методом рентгеновского энергодисперсионного микроанализа определено, что капли состоят из индия. Основными причинами нарушения стехиометрии являются капли In и частичная десорбция элементов V группы. Установлено, что источником капель In являются образование жидкой фракции In на поверхности мишени при распылении с флюенсом 2,3 Дж/см2 и высокая поверхностная диффузия In из объема слоя на поверхность. Введение поверхностно-активных элементов в состав твердого раствора приводит к предотвращению десорбции легколетучих элементов V группы, например мышьяка. Повышением лазерного флюенса и подбором состава твердого раствора можно улучшать морфологию тонких пленок, выращенных методом импульсного лазерного напыления.

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Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

Cited by 3 publications

References 11 publications

Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

Synthesis and structural properties of thin YAG:Ce-=SUP=-3+-=/SUP=- films produced by pulsed laser deposition

Особенности Выращивания Многокомпонентных Твердых Растворов Импульсным Лазерным Напылением, "Наука Юга России"

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