Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

Modeling Epitaxial Layer Growth from Gas Phase for Analysis of Influence of Changing Technological Process with Variation in Growth Zone Heating

“…The most common methods for growing heterostructures are gas and liquid phase epitaxy, magnetron sputtering, and molecular beam epitaxy. A large number of experimental works have been described for manufacturing and using heterostructures because of their wide usage [1][2][3][4][5][6][7][8][9][10][11]. At the same time, essentially, a small number of works describe prognosis of epitaxy processes [12].…”

On approach for homogeneity increasing of films grown from the gas phase with account natural convection and changes in the rate of chemical interaction between materials

“…At present large number of electronics devices based on heterostructures. Heterostructures could be grown by using different well-known approaches [1][2][3][4][5][6][7][8][9][10][11][12]. At the same time at large number of experimental studies on growth of heterostructures [1][2][3][4][5][6][7][8][9][10][11][12] we find small quantity of theoretical works with prognosis of processes [12].…”

“…Heterostructures could be grown by using different well-known approaches [1][2][3][4][5][6][7][8][9][10][11][12]. At the same time at large number of experimental studies on growth of heterostructures [1][2][3][4][5][6][7][8][9][10][11][12] we find small quantity of theoretical works with prognosis of processes [12]. Main aim of this paper is to analysis changing of properties of epitaxial layers with a changing of the values of different parameters of the epitaxy process with account chemical interaction natural convection.…”

Analysis of Possibility of Growth of Several Epitaxial Layers Simultaneously In Gas Phases Framework One Technological Process. On Possibility to Change Properties of Epitaxial Layers

“…The most common methods for growing heterostructures are epitaxy from gas and liquid phase, magnetron sputtering, molecular beam epitaxy. The are many experimental works describe manufacturing and growth of heterostructures [1][2][3][4][5][6][7][8][9][10][11]. At the same time essentially smaller quantity of works describes prognosis of epitaxy processes [12].…”