Analysis of Possibility of Growth of Several Epitaxial Layers Simultaneously In Gas Phases Framework One Technological Process. On Possibility to Change Properties of Epitaxial Layers

Abstract

We analyzed nonlinear model with varying in space and time coefficients of growth of epitaxial layers from gas phase in a vertical reactor with account native convection. We formulate several conditions to increase homogeneity of epitaxial layers with varying of technological process parameters. KEYWORDS Gas phase epitaxy; native convection; increasing of homogeneity of films; analytical approach for modeling