GaSe and GaTe anisotropic layered semiconductors for radiation detectors

Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices

“…Most likely due to upreaching, the thermodynamics temperature at a lower growth temperature h-GaTe structure is attributed, and at a critical temperature (500 °C) the m-GaTe phase starts to appear, followed by a transformation into a monoclinic structure. These XRD findings are in excellent agreement with the previously reported GaTe properties. ,,, However, it is noteworthy that the m-GaTe peaks do not appear in the films grown at 400 and 450 °C, indicating the absence of the m-GaTe phase at these temperatures. Consequently, these results affirm 500 °C as the optimized growth temperature for the m-GaTe film.…”

“…These XRD findings are in excellent agreement with the previously reported GaTe properties. 37,39,41,42 However, it is noteworthy that the m-GaTe peaks do not appear in the films grown at 400 and 450 °C, indicating the absence of the m-GaTe phase at these temperatures. Consequently, these results affirm 500 °C as the optimized growth temperature for the m-GaTe film.…”

Layered III-VI chalcogenide semiconductor crystals for radiation detectors

“…To further understand the procedures required to grow this material, we used a previously reported on state-of-the-art computer model, MASTRAPP, to model the heat and mass transfer in the Bridgman growth system. 12,15 This also helps in predicting stress distributions in the as-grown crystals. EIC's crystal growth systems are computer controlled and based on the growth parameters derived from in-house advanced computer modeling and simulation.…”

“…Additionally, GaSe has a large nonlinear optical coefficient (d 22 =75 pm/V), high charge carrier mobilities and is easily cleaved for detector fabrication. [10][11][12][13][14][15][16][17] The physicochemical properties of these materials are amenable to conventional material processing procedures and crystal growth at moderate temperatures. Furthermore, they are very stable chemically.…”

“…16 Indium doping has also been used in GaSe to enhance the charge transport properties and to improve the mechanical hardness of the crystals. [14][15]17 EIC uses several high temperature furnaces, round the clock computer operated, multi-zone furnaces to grow crystals up to 4" diameter ( Figure 1). Silicon carbide heating elements are used as the high temperature heat source in these furnaces.…”