The authors report results of transport studies on high quality, fully epitaxial BiFeO3 thin films grown via pulsed laser deposition on SrRuO3∕DyScO3 (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either SrRuO3 or Pt top electrodes and SrRuO3 bottom electrodes. Comparison between these structures demonstrates the influence of electrode selection on the dominant transport mechanism. Analysis of film electrical response suggests Poole-Frenkel emission as the limiting leakage current mechanism in the symmetric structure. Temperature dependent measurements yield trap ionization energies of ∼0.65–0.8eV. No clear dominant leakage mechanism was observed for the asymmetric structure.

With an ever-expanding demand for data storage, transducers, and microelectromechanical (MEMS) systems applications, materials with superior ferroelectric and piezoelectric responses are of great interest. The lead zirconate titanate (PZT) family of materials has served as the cornerstone for such applications up until now. A critical drawback of this material, however, is the presence of lead and the recent concerns about the toxicity of lead-containing devices. Recently, the lead-free ferroelectric BiFeO 3 (BFO) has attracted a great deal of attention because of its superior thin-film ferroelectric properties, [1,2] which are comparable to those of the tetragonal, Ti-rich PZT system; therefore, BFO provides an alternate choice as a "green" ferro/piezoelectric material. Another advantage of BFO is its high ferroelectric Curie temperature (T c = 850°C in single crystals), [3,4] which enables it to be used reliably at high temperatures. The ferroelectric domain structure of epitaxial BFO films are typically discussed in the context of the crystallographic model of Kubel and Schmid; [5] however, by suppressing other structural variants in BFO, we can obtain periodic domain structures that may open additional application opportunities for this material. Ferroelectrics with periodic domain structures are of great interest for applications in photonic devices [6] and nanolithography.[7] Such a periodic polarization could be obtained by applying an external electric field while utilizing lithographically defined electrodes or by a direct writing process. [8,9] To obtain sub-micrometer feature sizes, however, domain engineering using a scanning force microscope with an appropriate bias voltage must be used to fabricate the patterned domain structures.[10] Unfortunately, this method works only on small areas and is limited by its slow scanning rate. Theoretical models predict the feasibility of controlling the domain architecture in thin films through suitable control over the heteroepitaxial constraints. [11] In the case of BFO thin films, we have found that such a control is indeed possible, mainly through control over the growth of the underlying SrRuO 3 electrode. Using this approach, we demonstrate the growth of highly ordered 1D ferroelectric domains in 120 nm thick BFO films. On the (001) C perovskite surface there are eight possible ferroelectric polarization directions corresponding to four structural variants of the rhombohedral ferroelectric thin film. (For simplicity, the c and o subscripts refer to the pseudocubic structures for BFO and orthorhombic structures of SrRuO 3 (SRO) and DyScO 3 (110) O (DSO), respectively.) Domain patterns can develop with either {100} C or {101} C boundaries for (001) C -oriented rhombohedral films. [12] In both cases, the individual domains in the patterns are energetically degenerate and thus equal-width stripe patterns are theoretically predicted. When the spontaneous polarization is included in the analysis, the {100} C boundary patterns have no normal component of the net po...

Abstract. We have integrated a commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) onto a single PC-board. At temperatures accessible with Peltier coolers (~200-240K), the PCB-SPD achieves high detection efficiency (DE) at 1308 and 1545 nm with low dark count probability (e.g. ~10 -6 /bias pulse at DE=20%, 220 K), making it useful for quantum key distribution (QKD). The board generates fast bias pulses, cancels noise transients, amplifies the signals, and sends them to an on-board discriminator. A digital blanking circuit suppresses afterpulsing.

A commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) have been integrated onto a single PC board (PCB). At temperatures accessible with Peltier coolers ($200-240 K), the PCB-SPD achieves high detection efficiency (DE) at 1308 and 1545 nm with low dark-count probability (e.g. $10 À6 /bias pulse at DE ¼ 20%, 220 K), making it useful for quantum key distribution (QKD). The board generates fast bias pulses, cancels noise transients, amplifies the signals, and sends them to an on-board discriminator. A digital blanking circuit suppresses afterpulsing. IntroductionThe upsurge of interest in quantum key distribution (QKD) [1, 2] in recent years has motivated an extensive effort aimed at developing single-photon detectors (SPDs) for the telecommunication wavelength windows around 1310 and 1550 nm [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The efficiency, dark-count probability, and recovery times of the detectors limit the range and bit generation rates that can be achieved in QKD systems. Avalanche photodiodes (APDs) based on either Ge or InGaAs have proven to be the most convenient and cost-effective devices for this purpose. While the intrinsic characteristics of APDs are primary factors in determining their suitability for single-photon detection and have been intensively studied, to be useful as a SPD the photodiode must be surrounded with a constellation of auxiliary electronics. Single photons are detected using an APD by reverse-biasing the diode above its breakdown voltage, V br . A single photoexcited carrier can then initiate an avalanche, which generates a large output charge pulse. In gated mode, the diode is DC biased slightly below V br , and is pulsed above V br just at the photon arrival time to maximize the detection efficiency (DE). DE is the overall probability of registering a count if a photon arrives at the detector, and includes fibre coupling loss, APD optical coupling efficiency and intrinsic quantum efficiency, and the efficiency with which the signal processing electronics respond to photon signals from the APD. The bias pulse should be as short as possible to minimize the probability that a thermal carrier will be present during the bias pulse and will trigger an avalanche. Our PCB single-photon detector (PCB-SPD)