Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices

Abstract

Gallium telluride thin films have emerged as a promising material for various electronic and optoelectronic applications due to their unique properties. In this study, we investigate the growth of nanometer-thick GaTe films on sapphire substrates using molecular beam epitaxy and explore the influence of the growth temperature on the structural, electronic, and optical properties of the films. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman measurements are employed to characterize the structural quality of the films, while spectroscopy ellipsometry provides insights into their electronic and optical behavior. Our findings demonstrate that a higher temperature (500 °C) is the optimized growth temperature, which significantly impacts the quality and properties of GaTe thin films, making it a critical parameter for optimizing their performance in electronic and optoelectronic devices.