GaN grown with InGaN as a weakly bonded layer

Xu, Xiaoqing; Guo, Yan; Liu, Xianglin; Liu, Jianming; Song, Haipeng; Zhang, Biao; Wang, Jun; Yang, Shuangqiao; Wei, Hongyuan; Zhu, Qinsheng; Wang, Zhanguo

doi:10.1039/c0ce00345j

Cited by 9 publications

(6 citation statements)

References 18 publications

(14 reference statements)

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“…Our previous results have theoretically proved that the structure of the InGaN interlayer is readily decomposed when the temperature ramps down to 1100 • C; and then it acts as a weakly bonded layer, which plays a compliant role in improving the crystalline quality and relieving the strain. [14][15][16] We also find that the thickness of the InGaN interlayer exerts great influences on the surface morphology, crystalline quality, optical property, and film state, which are thoroughly discussed here in this paper.…”

Section: Introductionmentioning

confidence: 67%

Effect of the thickness of InGaN interlayer on a -plane GaN epilayer

Wang¹,

Wang²,

Zhang³

et al. 2015

Chinese Phys. B

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In this paper, we use the a-plane InGaN interlayer to improve the property of a-plane GaN. Based on the a-InGaN interlayer, a template exhibits that a regular, porous structure, which acts as a compliant effect, can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire. We find that the thickness of InGaN has a great influence on the growth of a-GaN. The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer. When the InGaN thickness exceeds a critical point, the a-GaN epilayer peels off in the process of cooling down to room temperature. This is an attractive way of lifting off a-GaN films from the sapphire substrate.

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Section: Introductionmentioning

confidence: 67%

Effect of the thickness of InGaN interlayer on a -plane GaN epilayer

Wang¹,

Wang²,

Zhang³

et al. 2015

Chinese Phys. B

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“…We have theoretically proved that the InGaN interlayer is readily decomposed when the temperature is ramped to 1100 1C [18]. In order to get information of the InGaN film on the substrate, we prepared a sample of single InGaN layer grown on sapphire with the same growth parameters as those of samples C and D. The as-grown film was yellowish and its surface was flat.…”

Section: Resultsmentioning

confidence: 99%

“…Sample d [11][12][13][14][15][16][17][18][19][20] mainly proceeds in the m direction. So the mosaic size in m direction will get larger improvement than the mosaic size in c direction because of the lateral overgrowth.…”

Section: Resultsmentioning

confidence: 99%

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Wei

et al. 2012

Journal of Crystal Growth

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“…For examples, Reiher et al [10] utilized a low temperature AlN interlayer to reduce the tensile stress and cracks in thick GaN layers on Si. Xu et al [11] obtained a nearly stress-free GaN single-crystalline film with mirror-like morphology by inserting an InGaN interlayer as a weakly bonded layer.…”

Section: Introductionmentioning

confidence: 99%

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

Liu

Liang

Liu

et al. 2017

Materials Science in Semiconductor Processing

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GaN epilayers with thick InGaN interlayer are grown by metal-organic chemical vapor deposition on sapphire substrates. The as-grown GaN films with an InGaN interlayer show remarkable relaxed compressive strain measured by Raman spectroscopy. The microstructures within the InGaN interlayer were investigated by high resolution transmission electron microscopy. It indicated that the misfit dislocations and stacking faults in the InGaN interlayer formed, which is responsible for the relaxation of the lattice strain. In addition, the InGaN interlayer was found to terminate most of threading dislocation from the GaN pseudosubstrate layer even though the strain relaxation occurs. Such data help to provide further insight into the strain relaxation mechanisms and improve the quality of GaN films and the performance of GaN related devices.

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GaN grown with InGaN as a weakly bonded layer

Cited by 9 publications

References 18 publications

Effect of the thickness of InGaN interlayer on a -plane GaN epilayer

Effect of the thickness of InGaN interlayer on a -plane GaN epilayer

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

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