Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

Abstract

GaN epilayers with thick InGaN interlayer are grown by metal-organic chemical vapor deposition on sapphire substrates. The as-grown GaN films with an InGaN interlayer show remarkable relaxed compressive strain measured by Raman spectroscopy. The microstructures within the InGaN interlayer were investigated by high resolution transmission electron microscopy. It indicated that the misfit dislocations and stacking faults in the InGaN interlayer formed, which is responsible for the relaxation of the lattice strain. In addition, the InGaN interlayer was found to terminate most of threading dislocation from the GaN pseudosubstrate layer even though the strain relaxation occurs. Such data help to provide further insight into the strain relaxation mechanisms and improve the quality of GaN films and the performance of GaN related devices.

Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates

“…Stress engineering plays a critical role in the design of high-performance GaN-based devices [ 10 ]. A strain-relaxation InGaN buffer underlayer can be introduced to decrease the lattice mismatch in the InGaN/GaN active region, which could also regulate the wavelengths of the InGaN/GaN QWs by increasing indium incorporation [ 11 , 12 ].…”