Effect of the thickness of InGaN interlayer on
                    <i>a</i>
                    -plane GaN epilayer

Wang, Jianxia; Wang, Lianshan; Zhang, Qian; Meng, Xianwei; Yang, Shuangqiao; Zhao, Guijuan; Li, Huijie; Wei, Hongyuan; Wang, Zhanguo

doi:10.1088/1674-1056/24/2/026802

Cited by 3 publications

(4 citation statements)

References 18 publications

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“…The growth was initiated by 1-μm-thick underlying GaN template layer, which use a 40-nm-thick In x Ga 1− x N interlayer to improve the crystallinity, as discussed in detail elsewhere 6–8 . Subsequently, In x Ga 1−x N alloys with different Indium content x were grown at 50 torr by changing the deposition temperature and growth time with Trimethylgallium (TMGa), Trimethylindium (TMIn) and ammonia (NH 3 ) as sources and nitrogen as carrier gas.…”

Section: Methodsmentioning

confidence: 99%

“…Non-polar (11 0) In x Ga 1− x N/GaN epitaxial layers with different indium compositions x were grown on (1 02) sapphire substrates, using a single 2-inch wafer home-made low-pressure metalorganic chemical vapor deposition (MOCVD) system. The growth was initiated by 1-μm-thick underlying GaN template layer, which use a 40-nm-thick In x Ga 1− x N interlayer to improve the crystallinity, as discussed in detail elsewhere 6 – 8 . Subsequently, In x Ga 1−x N alloys with different Indium content x were grown at 50 torr by changing the deposition temperature and growth time with Trimethylgallium (TMGa), Trimethylindium (TMIn) and ammonia (NH 3 ) as sources and nitrogen as carrier gas.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Zhao

Wang

et al. 2017

Sci Rep

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In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane InxGa1−xN on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the InxGa1−xN reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of InxGa1−xN layer releases through surface roughening and the 3D growth-mode.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Zhao

Wang

et al. 2017

Sci Rep

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“…Wang J X et al have used the α-plane InGaN interlayer to improve the property of α-plane GaN grown on sapphire substrates. [11] Liu et al have prepared GaN/InGaN multiple quantum wells on Si substrates and investigated the influences of stress on the properties. [12] Nishikawa et al have studied the current-voltage characteristics of InGaN/GaN vertical conducting diodes grown on SiC substrates.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous growth of KDP/KT crystal

Wang¹,

Shi²,

Zhang³

et al. 2017

Chinese Phys. B

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The growth of heterogeneous crystal has aroused a great deal of interest in recent years. In this study, KH 2 PO 4 (KDP)/KTaO 3 (KT) heterogeneous crystal is acquired based on the KT substrate. Here, we report the observation of the oriented layer-by-layer structure in KDP/KT composite crystal by scanning electron microscopy (SEM). The structure of KDP/KT composite crystal is accurately identified by transmission electron microscopy (TEM) for the first time and we find that the KT crystals dope into KDP crystal in the growth process with the mode of doping. It can be obtained from the analysis of crystal structure that the structure difference leads to the doping growth mode. Our research demonstrates a facile method to fabricate a composite nonlinear optical crystal based on KDP/KT heterostructure, and might shed light on potential applications of the composite nonlinear optical crystal.

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“…Thus the growth of V-pits is considered a practical method to obtain LEDs with a lower operating voltage and a higher emission efficiency. In the active region of green LEDs, to release the stress from high indium composition, several periods of InGaN/GaN superlattices and blue quantum wells are usually inserted between n-GaN and green MQWs [1,[9][10][11]. These inserted layers grown under low temperature induce large V-pits at the threading dislocations [12].…”

Section: Introductionmentioning

confidence: 99%

Effects of p-AlGaN EBL thickness on the performance of InGaN green LEDs with large V-pits

Liu

Mao

et al. 2015

Semicond. Sci. Technol.

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The effects of the p-AlGaN electron blocking layer (EBL) thickness on the performance of InGaN/GaN multiple quantum wells (MQWs) green light emitting diodes (LEDs) was investigated. It was observed that increasing the thickness of the p-AlGaN EBL could reduce the leakage current and improve the efficiency of green LEDs with large V-pits. It is proposed that increasing the EBL thickness leads to a thicker p-AlGaN on the sidewalls of V-pits, which provides a thicker energy barrier and consequently screens dislocations more effectively. The leakage current (at −5 V) of LEDs with a 40 nm EBL is about an order of magnitude lower than that of LEDs with a 20 nm EBL. With the increase in EBL thickness, at low current densities, the external quantum efficiency (EQE) firstly decreases and then increases afterwards, which could be attributed to the competition between the enhancement of the radiative recombination rate and the reduction of the hole injection efficiency. At operating current density, there is a positive correlation between EQE and the thickness of the EBL. This is attributed to the improved electron confinement in the active region by preventing electrons overflowing to the p-type layer. Meanwhile, the efficiency droop is obviously suppressed when the thickness of the EBL increases from 20 nm to 40 nm. However, further increasing the thickness of the EBL may deteriorate the EQE and efficiency droop. Packaged green LED chips with an optimized EBL emit 260 mW (dominant wavelength: 520 nm) at 350 mA (35 A cm −2 ), and the EQE reaches 31.2%.

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Effect of the thickness of InGaN interlayer on a -plane GaN epilayer

Cited by 3 publications

References 18 publications

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Heterogeneous growth of KDP/KT crystal

Effects of p-AlGaN EBL thickness on the performance of InGaN green LEDs with large V-pits

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