GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

“…All these minimized defects and scattering centers would then contribute to the longer minority lifetime which is favorable for efficient photo-induced electron/hole separation and collection. From the literature, one can find the electron mobility (µ) of GaAs NW around 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 9 4000 cm 2 V -1 s -1 and electron lifetime (τ) in the order of 10 2 ps, [29][30][31][32][33] resulting in an electron diffusion length around 1 µm as estimated by equation (µτkT/e) 1/2 (where kT/e is constant), that is in a good agreement with the electron beam induced current (EBIC) and Kelvin probe force microscopy (KPFM) measurements. 34,35 All these are completely consistent with our results presented in Figure 2d, in which the photovoltaic performance statistics (based on 100 single NW devices) explicitly show that the high efficiency and large J SC are only obtained for the channel length <1 µm.…”

Vapor-Liquid-Solid Growth of Semiconductor Nanowires

“…Figure 9.10(c) shows the epitaxial relation between a GaAs planar nanowire and the substrate, and the interface between the Au catalyst NP and the planar nanowire is also shown. High carrier mobility was extracted from planar nanowire-based field effect transistors (FETs), which verified the high crystal quality of <110> GaAs planar nanowires [125][126][127]. High carrier mobility was extracted from planar nanowire-based field effect transistors (FETs), which verified the high crystal quality of <110> GaAs planar nanowires [125][126][127].…”

Nanoscale Semiconductor Electronics

“…Recently, III-V semiconductor in-plane nanowire (NW) field-effect transistors (FETs) have been reported by several research groups. For their high mobility with scalable size, various process technologies such as vapor-liquid-solid (VLS) growth and anisotropic wet etching have been examined for their fabrication [1] - [4]. For smaller III-V NWs, bottom up fabrication relying on VLS mechanism is preferentially used rather than top-down process.…”