A large second-order nonlinearity [chi((2)) 1 pm/V 0.2 chi((2)) (22) for LiNbO(3)] is induced in the near-surface ( 4 microm) region of commercial fused-silica optical flats by a temperature (250-325 degrees C) and electric-field (E ~ 5 x 10(4) V/cm) poling process. Once formed, the nonlinearity, which is roughly 10(3)-10(4) times larger than that found in fiber second-harmonic experiments, is extremely stable at room temperature and laboratory ambient. The nonlinearity can be cycled by repeated depoling (temperature only) and repoling (temperature and electric field) processes without history effects. Possible mechanisms, including nonlinear moieties and electric-field-induced second-order nonlinearities, are discussed.

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of 15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.

We introduce and demonstrate a new microscopy concept: imaging interferometric microscopy (IIM), which is related to holography, synthetic-aperture imaging, and off-axis-dark-field illumination techniques. IIM is a wavelength-division multiplex approach to image formation that combines multiple images covering different spatial-frequency regions to form a composite image with a resolution much greater than that permitted by the same optical system using conventional techniques. This new type of microscopy involves both off-axis coherent illumination and reinjection of appropriate zero-order reference beams. Images demonstrate high resolution, comparable with that of a high-numerical-aperture (NA) objective, while they retain the long working distance, the large depth of field, and the large field of view of a low-NA objective. A Fourier-optics model of IIM is in good agreement with the experiment.

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN core−shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and visible-light communication. A record −3 dB modulation bandwidth ∼1.2 GHz at 1 kA/cm 2 (higher than any LED grown on c-plane GaN), and a lowleakage current−voltage characteristic with excellent rectifying behavior are achieved. Analysis using a small-signal equivalent electrical circuit for the μLEDs indicates a significantly longer differential recombination lifetime (∼330 ps) compared to the measured RC time constant (∼30 ps) at 1 kA/cm 2 , confirming negligible effects from RC parasitic delay on the modulation speed. The bandwidth versus current density (J) characteristic shows a different trend compared to planar c-plane and m-plane reference μLEDs, even though the nanowires are composed of both polar cplane and nonpolar m-plane sidewalls. The anomalous behavior of the bandwidth versus J characteristic is explained by nonuniform carrier injection, coupled with nonuniform quantum well thickness and indium composition, across the nanowire. The interpretation of the RF behavior of the nanowire-based μLEDs is supported by scanning transmission electron microscopy images, a significant blue shift (∼55 nm) of the electroluminescence spectra with applied bias, and nonuniform injection revealed by COMSOL simulations.