High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

Han, Ning; Yang, Zaixing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tai‐Feng; Chen, Yunfa; Ho, Johnny C.

doi:10.1021/acsami.5b06452

Cited by 57 publications

(55 citation statements)

References 45 publications

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“…Photodetectors based on III–V semiconductor NWs have been fabricated in different configurations such as core–shell nanostructures, alloys, and heterostructures . Among all III–V NWs, gallium arsenide (GaAs) NWs have gained immense attention for detection application over recent years because of their high light‐to‐electricity conversion efficiency, moderate direct bandgap (1.42 eV), and high compatibility with Si technology, which in turn make them suitable for various outstanding optoelectronic applications like solar cells, photodetectors, p‐n diodes, and field effect transistors …”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

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Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and nonradiative recombination centers. Here, self-catalyzed p-type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photoresponsivity of 1.45 × 10 A W and excellent specific detectivity (D*) up to 1.48 × 10 Jones for a low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.

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Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

Small

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“…Kwon et al made flexible solar cells using Si NWs and achieved an efficiency of >8% [189]. Han et al fabricated flexible GaAs NW solar cells with NWs lying horizontally and achieved a high efficiency of 16% under air mass 1.5 global illumination [190].…”

Section: Design For Novel High-efficiency and Low-cost Solar Cellsmentioning

confidence: 99%

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Zhang

Liu

2019

Crystals

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Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

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“…Furthermore, heterostructured junctions and passivation have been intensely investigated for efficiently carrier separation and collection [75][76][77][78]. Nowadays, design of transparent or wearable NW device also paves the way of PV applications by making it more intelligent [79][80][81]. The synthesis of 1D GaAs NW by self-catalyzed or self-assisted method has recently been provided in [82][83][84][85], with the goal of growing gold-free GaAs NWs.…”

Section: Introductionmentioning

confidence: 99%

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

et al. 2018

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Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.

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High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

Cited by 57 publications

References 45 publications

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

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