High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan, Ali; Zhang, Yunyan; Tang, Jing; Peng, Kai; Sun, Sibai; Sun, Yue; Song, Feilong; Falak, Attia; Wu, Shaojie; Qian, Chenjiang; Wang, Meng; Zuo, Zhentao; Jin, Kuijuan; Sanchez, Ana M.; Liu, Huiyun; Xu, Xiulai

doi:10.1002/smll.201704429

Cited by 61 publications

(47 citation statements)

References 63 publications

(175 reference statements)

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“…(NWs) represent a promising platform to implement quantum computation and quantum information processing [1,2] and this specific implementation, NWs, provides a versatile material system to demonstrate innovative nanoscale devices, such as lasers, photo-sensors and solar cells [3][4][5][6][7][8][9]. In this frame, compared to other semiconductor NW systems, InP NWs display a lower susceptibility to non-radiative surface states and a stronger photoluminescence (PL) emission: this material system is therefore of particular interest for quantum-photonics application [10][11][12][13][14][15][16][17].…”

mentioning

confidence: 99%

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Peng

Battiato

et al. 2019

Nano Res.

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Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through microphotoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires. Keywordsg-factor tensor, diamagnetic coefficient, crystal-phased quantum dot, InP NWs InstructionQuantum wells and quantum dots (QDs) realized in semiconductor nanowires

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confidence: 99%

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Peng

Battiato

et al. 2019

Nano Res.

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“…Due to the accumulated photon-generated holes on the NW surface, electrons move to the surface through tunneling, and crossing the barrier will recombine at the surface, leading to a weaker interband emission but longer emission wavelengths. The p-type GaAs NW has shown extraordinary photoelectric properties in photoelectric detection [ 139 ]. The surface state of the p-type NW is similar to that of the donor and can trap holes, leading to the negatively charged surface depletion zones and the downward bending of the CB and VB bands ( Figure 12 c).…”

Section: Structural–dependent–physical Properties Of Iii–v Nwsmentioning

confidence: 99%

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures

Zhang

Cheng

et al. 2022

Materials

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III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

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“…The main part of doping studies currently exists for Au or Ga seeded GaAs NWs [54][55][56][57][58][59]. The most commonly used n-type dopants are Te [55,57,60] and Si [61][62][63], while the most commonly used p-type dopants are Be [55,58,59,64], C [61], and Zn [54,56,57]. During the doped NW growth, the decomposition and diffusion of different growth species in the vapor phase on the surface of the NW and in the catalytic particles will affect the homogeneity of carrier concentration, material composition, and doping profile abruptness.…”

Section: Doping In Gaas Nwsmentioning

confidence: 99%

Optical property and lasing of GaAs-based nanowires

Chen

Wei

et al. 2020

Sci. China Mater.

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GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with materials working in the ultraviolet and visible ranges, GaAs-based infrared NW lasers, however, are more difficult to achieve because of their specific properties. In this review, we focus on the recent developments of GaAs-based NWs, more especially, the optical property and lasing of GaAs-based NWs. The growth mechanism of GaAs NWs is introduced in detail, including the crystal phase control and the growth of complex structures. Subsequently, the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed. Finally, the design and latest progress of GaAs-based NW lasers are put forward.

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High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Cited by 61 publications

References 63 publications

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures

Optical property and lasing of GaAs-based nanowires

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