Low-dimensional all-inorganic metal halide perovskites have been demonstrated as excellent building blocks for high-performance optoelectronic devices. Although many progresses have been achieved in low-dimensional all-inorganic perovskites, the substitution of toxic Pb is urgent for further optoelectronic applications. Here, we present the growth of lead-free all-inorganic CsSnX 3 (X = Cl, Br, and I) perovskite nanowire (NW) arrays on a mica substrate by a solid-source chemical vapor deposition method. All of the lead-free all-inorganic CsSnX 3 perovskite NW arrays epitaxially grow on the mica substrate to form equilateral triangles. The band gaps of the as-prepared CsSnX 3 perovskite NW arrays decrease from 1.84 to 1.34 eV with X changes from Br to I. The high crystallinity is confirmed by the strong photoluminescence (PL) emission peaks and uniform twodimensional PL mapping images. In the end, the as-prepared high-quality CsSnI 3 perovskite NW array is then configured into a near-infrared photodetector for the first time, exhibiting fast rise and decay time constants of 83.8 and 243.4 ms, respectively. All of the results present an important advance in the field of low-dimensional all-inorganic perovskites.

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

Application of novel microwave-assisted vacuum frying to reduce the oil uptake and improve the quality of potato chips, LWT -Food Science and Technology (2016), ABSTRACT: The objective of this study was to evaluate the ability of 20 microwave-assisted frying (MVF) technology to reduce the oil uptake and improve 21 quality attributes of fried potato chips. Potato chips were produced using MVF and 22 vacuum frying (VF) technologies and the oil uptake, residual moisture content, 23 microstructure, texture (crispness) and color attributes of chips were compared. The 24 effects of microwave power density (12, 16 and 20 W/g), frying temperature (100, 25 110 and 120 ) and vacuum degree (0.065, 0.075 and 0.085 MPa) in MVF were 26 evaluated. Results showed that the oil uptake in MVF samples was significantly lower 27 than VF samples, decreased from 39.14 to 29.35 g oil/100 g dry solid. The moisture 28 evaporation rates were accelerated and the MVF produced crispier chips with better 29 natural color. Higher microwave power densities resulted in faster water evaporation 30 rates and lower breaking force. Higher frying temperature led to faster water 31 evaporation, lower oil content and faster color change. Higher vacuum degree bring 32 about faster water evaporation, lower oil content and less color change. Observation 33 of microstructure showed that the cellular structure and integrity of cell wall in chips 34 was better preserved by MVF.35

Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V–1 s–1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V–1 s–1, a high responsivity of 61 A W–1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Though the chemical origin of a metal oxide gas sensor is widely accepted to be the surface reaction of detectants with ionsorbed oxygen, how the sensing material transduces the chemical reaction into an electrical signal (i.e., resistance change) is still not well-recognized. Herein, the single ZnO NW is used as a model to investigate the relationship between the microstructure and sensing performance. It is found that the acetone responses arrive at the maximum at the NW diameter (D) of ∼110 nm at the D range of 80 to 400 nm, which is temperature independent in the temperature region of 200 °C–375 °C. The electrical properties of the single NW field effect transistors illustrate that the electron mobility decreases but electron concentration increases with the D ranging from ∼60 nm to ∼150 nm, inferring the good crystal quality of thinner ZnO NWs and the abundant crystal defects in thicker NWs. Subsequently, the surface charge layer (L) is calculated to be a constant of 43.6 ± 3.7 nm at this D range, which cannot be explained by the conventional D–L model in which the gas-sensing maximum appears when D approximates 2L. Furthermore, the crystal defects in the single ZnO NW are probed by employing the microphotoluminescence technique. The mechanism is proposed to be the compromise of the two kinds of crystal defects in ZnO (i.e., more donors and fewer acceptors favor the gas-sensing performance), which is again verified by the gas sensors based on the NW contacts.

Large-size, single-crystalline and high-density PbI2 nanobelts are successfully synthesized by a two-step vapor deposition process at a slow heating rate.

Abstract1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental physics and promising applications of high‐performance room‐temperature infrared (IR) detectors. Here, a comprehensive overview of recent advances in the study of III–V NW‐based IR detectors is presented, starting from the rationale of III–V NWs for IR detectors, the controllable synthesis of III–V NWs to the precise manipulation of III–V NW‐based IR detector performances. With a bandgap covering the whole IR wavelength range and a high carrier mobility, III–V NWs are considered as the most optimal channel materials for high‐performance IR detectors. The synthesis methods and growth mechanisms of high quality III–V NWs are discussed, emphasizing the low‐cost solid source chemical vapor deposition (CVD) technique, which is developed as the two‐step and surfactant‐assisted CVD methods in the growth of various III–V NWs. Next, the representative types of III–V NW IR detectors are discussed and typical strategies to resolve main challenges limiting the performance of III–V NW‐based IR detectors are reviewed, including high density of surface trap states, large dark current, etc. Finally, the possible challenges and opportunities in the future development of III–V NW‐based IR detectors are discussed.