Controllable Growth of Lead-Free All-Inorganic Perovskite Nanowire Array with Fast and Stable Near-Infrared Photodetection

Abstract

Low-dimensional all-inorganic metal halide perovskites have been demonstrated as excellent building blocks for high-performance optoelectronic devices. Although many progresses have been achieved in low-dimensional all-inorganic perovskites, the substitution of toxic Pb is urgent for further optoelectronic applications. Here, we present the growth of lead-free all-inorganic CsSnX 3 (X = Cl, Br, and I) perovskite nanowire (NW) arrays on a mica substrate by a solid-source chemical vapor deposition method. All of the lead-free all-inorganic CsSnX 3 perovskite NW arrays epitaxially grow on the mica substrate to form equilateral triangles. The band gaps of the as-prepared CsSnX 3 perovskite NW arrays decrease from 1.84 to 1.34 eV with X changes from Br to I. The high crystallinity is confirmed by the strong photoluminescence (PL) emission peaks and uniform twodimensional PL mapping images. In the end, the as-prepared high-quality CsSnI 3 perovskite NW array is then configured into a near-infrared photodetector for the first time, exhibiting fast rise and decay time constants of 83.8 and 243.4 ms, respectively. All of the results present an important advance in the field of low-dimensional all-inorganic perovskites.

Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

“…[ 6,7 ] Over the past decade, vapor‐phase growth techniques have been widely used to grow CsPbX 3 microcrystals. [ 8–13 ] Compared with solution‐processable strategies, vapor‐phase growth techniques offer the advantage of solvent‐free, which can effectively avoid damages to the crystal quality. [ 14,15 ] It is regarded as a promising approach for patterning perovskite CsPbX 3 single crystals for constructing high‐performance integrated electronic and optoelectronic systems.…”

Stability enhancement of lead‐free CsSnI3 perovskite photodetector with reductive ascorbic acid additive

“…However, the toxicity of Pb and the instability of organic components severely limit its practical applications and commercialization. Alternatively, environment‐friendly inorganic perovskite CsSnX 3 (X = I, Br, Cl) has been considered as a substitution to construct various optoelectronic devices, such as photodetectors, memories, solar cells, and light‐emitting diodes . Among CsSnX 3 perovskites, CsSnI 3 has the smallest band gap (~1.2 eV) and high thermal stability, implying that it is more suitable for ultraviolet‐visible‐near infrared (UV‐Vis‐NIR) device.…”

“…Additionally, there are high‐density intrinsic defects related to Sn vacancies in the crystal structure, which will produce highly mobile holes and make CsSnI 3 appear to be metallic . Due to these disadvantages, the reported inorganic Sn‐based photodetectors exhibit poor performance with large dark current, seriously limiting the further development of Sn‐based halide perovskite …”

Graphoepitaxy of Large Scale, Highly Ordered CsPbBr3 Nanowire Array on Muscovite Mica (001) Driven by Surface Reconstructed Grooves

“…Thus, as a consequence of the atomic‐level flatness, it has become one of the most frequently used substrates in van der Waals epitaxial technologies. A variety of emergent materials, including II–VI/III–V semiconductors, [ 6–9 ] transition metal dichalcogenides, [ 10 ] metal halide perovskites, [ 11–19 ] topological insulators, [ 20 ] and oxides, [ 21 ] were grown on muscovite (001) in the past decades. These single crystals exhibited superior optoelectronic and electronic properties, compared to those grown on nonlayered substrates.…”