The research in circularly polarized luminescence has attracted wide interest in recent years. Efforts on one side are directed toward the development of chiral materials with both high luminescence efficiency and dissymmetry factors, and on the other side, are focused on the exploitations of these materials in optoelectronic applications. This review summarizes the recent frontiers (mostly within five years) in the research in circularly polarized luminescence, including the development of chiral emissive materials based on organic small molecules, compounds with aggregation-induced emissions, supramolecular assemblies, liquid crystals and liquids, polymers, metal-ligand coordination complexes and assemblies, metal clusters, inorganic nanomaterials, and photon upconversion systems. In addition, recent applications of related materials in organic light-emitting devices, circularly polarized light detectors, and organic lasers and displays are also discussed.

3D laser displays play an important role in next‐generation display technologies owing to the ultimate visual experience they provide. Circularly polarized (CP) laser emissions, featuring optical rotatory power and invariability under rotations, are attractive for 3D displays due to potential in enhancing contrast ratio and comfortability. However, the lack of pixelated self‐emissive CP microlaser arrays as display panels hinders the implementation of 3D laser displays. Here, full‐color 3D laser displays are demonstrated based on CP lasing with inkjet‐printed cholesteric liquid crystal (CLC) arrays as display panels. Individual CP lasers are realized by embedding fluorescent dyes into CLCs with their left‐/right‐handed helical superstructures serving as distributed feedback microcavities, bringing in ultrahigh circular polarization degree values (gem = 1.6). These CP microlaser pixels exhibit excellent far‐field color‐rendering features and a relatively large color gamut for high‐fidelity displays. With these printed CLC red–green–blue (RGB) microlaser arrays serving as display panels, proof‐of‐concept full‐color 3D laser displays are demonstrated via delivering images with orthogonal CP laser emissions into one's left and right eyes. These results provide valuable enlightenment for the development of 3D laser displays.

CsPbX 3 single crystals for constructing high-performance integrated electronic and optoelectronic systems. [15][16][17] However, because of lattice mismatch and random nucleation, [18,19] it is difficult to grow arrays of CsPbX 3 microcrystals in the vapor phase with uniform morphology as well as controlled location and size. For example, lattice mismatch results in diverse crystal morphologies and large densities of crystalline defects, including stacking faults, screw dislocations, and crystal boundaries. [20,21] Random nucleation is a disadvantage in the precise control of crystal locations for device integration. [22,23] Hence, the controllable growth of highquality perovskite single crystals for a device is highly challenging. This significantly hinders the controllable production of high-performance perovskite singlecrystal devices in arrays for integrated electronic and optoelectronic systems. Herein, we report an effective strategy to control the vaporphase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controllable location and size. By introducing CsPbBr 3 seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of CsPbBr 3 crystals is accurately controlled. In contrast to conventional vapor-phase growth methods, the as-prepared CsPbBr 3 single crystals can be selectively grown with uniform morphology as well as controlled location and size. Optical and electronic characterizations demonstrate that the CsPbBr 3 microplates exhibit a lower trap density and an enhancement in carrier lifetime exceeding 300% compared with those of conventional methods. The CsPbBr 3 microplate arrays were monolithically grown on silicon, demonstrating excellent lasing performance with the highest quality factor (Q factor) of ≈6806 and the narrowest full-width at half-maximum (FWHM) of ≈0.08 nm, which is the best laser performance among the reported perovskite singlecrystal arrays. Furthermore, the CsPbBr 3 microplate array was directly grown on a quartz glass for the scalable fabrication of high-performance photodetectors. This strategy allows the growth of high-quality CsPbBr 3 microplates with controllable size and location, thereby providing new opportunities for the construction of high-performance optoelectronic devices.To selectively grow CsPbBr 3 microplate arrays in the vapor phase, we first fabricated CsPbBr 3 seeds on silicon using our Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controlled location and size is r...