Vapor-Liquid-Solid Growth of Semiconductor Nanowires

Redwing, Joan M.; Miao, Xiangshui; Li, Xiuling

doi:10.1016/b978-0-444-63304-0.00009-3

Cited by 16 publications

(17 citation statements)

References 186 publications

(235 reference statements)

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“…III-V-based nanowires have also been extensively studied [55]. These structures are produced generally produced by a vapor-liquid-solid growth process [56] first explored in the 1970s.…”

Section: Unique Structuresmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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“…III-V-based nanowires have also been extensively studied [55]. These structures are produced generally produced by a vapor-liquid-solid growth process [56] first explored in the 1970s.…”

Section: Unique Structuresmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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“…The most widely reported process of semiconductor nanowire growth is the vapor-liquid-solid (VLS) [4,5] or the relatively recent vapor-solid-solid (VSS) [6,7] mechanism that involves a metal catalyst particle (externally supplied or in situ deposited [8]). The driving force for crystallization is the supersaturation of liquid or solid alloy droplets which are formed by metal catalytic capture of vapor phase reactants.…”

Section: Motivation Of 3d Iii-v Nanowire Transistorsmentioning

confidence: 99%

A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Zhang¹,

Miao²,

Chabak³

et al. 2017

J. Phys. D: Appl. Phys.

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Nanowires have long been regarded as a promising architecture for beyond Si CMOS logic, future III-V RF electronics, next generation optoelectronic applications, as well as heterogeneous integration. The inherent 3D structure also enables new device concepts that are otherwise not accessible with conventional technology. Nanowires grown using bottom-up epitaxial methods such as metalorganic chemical vapor deposition are free of ion-induced damage, which is especially critical for III-V because of the irreversibility of such damage, and can be scaled to dimensions smaller than lithographically defined. The challenges for nanowire based devices have been the controllability and compatibility with Si CMOS manufacturing. The discovery of parallel arrays of planar III-V nanowire growth mode provides an in-plane nanowire configuration that is perfectly compatible with existing planar processing technology for industry. The selective lateral epitaxy nature guided by the metal nanoparticles via the vapor-liquid-solid (VLS) mechanism opens up a new paradigm of crystal growth and consequently enabled in situ lateral and radial junctions. In this article, we review the planar nanowire based transistor development, particularly, planar III-As compound semiconductor based transistors enabled by this bottom-up self-assembled selective lateral VLS mechanism. We first review the characteristics and mechanism of planar nanowire growth, then focus on the growth, fabrication, and DC and RF performance of metalsemiconductor field-effect transistors, metal-oxide semiconductor field-effect transistors, and high electron mobility transistors (HEMTs), before providing our perspective on future development.

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“…Since it was first reported by Wagner and Ellis, 2 the vapor-liquid-solid (VLS) mechanism has been extensively used in the synthesis of a wide variety of one-dimensional nanowires from the μm to the nm diameter range. 3 Of particular interest are III-V compound nanowires grown by molecular-beam-epitaxy (MBE), 4 with direct bandgap and high mobilities. GaAsBi alloys are emerging as an interesting new class of III-V semiconductor, 5 with strong potential for the active regions in optical devices accessing longer wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

et al. 2015

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In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled nonmonotonous structure In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

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Vapor-Liquid-Solid Growth of Semiconductor Nanowires

Cited by 16 publications

References 186 publications

III-V compound semiconductors: Growth and structures

III-V compound semiconductors: Growth and structures

A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

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