Fundamental Studies of Acid-Breakable Resins for Chemical-Amplification Positive Resist Matrices.

Arai, Tadashi; Migitaka, Sonoko; Sakamizu, Toshio; Kasuya, Kei; Hashimoto, Michiaki; Shiraishi, Hiroshi

doi:10.2494/photopolymer.14.523

Cited by 3 publications

(1 citation statement)

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“…Dry-etch durability is correlated to the mass fraction of resist base materials existing as cyclic carbon. 10,11) Consequently, the dry-etch durability of 3M6C-MBSA may be similar to that of PHS. Figure 4 shows the etching rates are relative to PHS.…”

Section: Dry-etch Durabilitymentioning

confidence: 92%

Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion

et al. 2005

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ABSTRUCTWe have investigated the possibility of amorphous low molecular weight polyphenols as a chemically amplified positive-tone electron-beam (EB) resist. Low molecular weight polyphenol, 4,4'-methylenebis [2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)]methyl] phenol (3M6C-MBSA) as a base matrix, was protected by 1-ethoxyethyl (EE) groups to control the dissolution rate in 0.26 N tetramethylammonium hydroxide aq. developer. The film distribution in the depth direction for resist components with a Time-of-Flight Secondary Ion Mass Spectometry (TOF-SIMS) and the Fourier amplitude spectra of line-edge roughness (LER) have been investigated to understand the relationship between them for the resists formulated with 3M6C-MBSA and two types of photo acid generator (PAG), triphenylsulfonium perfluoro-1-butanesulfonate (TPS-PFBS) and triphenylsulfonium n-octanesulfonate (TPS-nOS). From these results, it was found that the resist film consisting of TPS-nOS showed more homogeneous in the depth film distribution than that with TPS-PFBS, and the resist with TPS-nOS also indicated the suppressed LER value of 5.1nm in the wide frequency range. Therefore, the homogeneity of the resist film may affect the pattern LER.

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Section: Dry-etch Durabilitymentioning

confidence: 92%